WMSIC Electronic Components

Infineon IRF100B202

ModelIRF100B202
PackageITO-220AB-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRF100B202
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF100B202
Electronic Component
1
Package
ITO-220AB-3
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.76g
Electronic Component
1
Electronic Component
BM0058411174
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
221W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRF100B202 N通道MOSFET

一、产品概述

IRF100B202是一款高性能的N通道金属氧化物半导体场效应管(MOSFET),专为要求高电流和高电压的应用而设计。其可靠性和高效能使其成为各种电源管理和开关应用中的理想选择。该器件的额定漏源电压为100V,最大连续漏极电流为97A,在极端工作环境下依然能保持卓越性能。

二、关键规格

  • FET类型:N通道
  • 技术:MOSFET(金属氧化物)
  • 漏源电压(Vdss):100V
  • 连续漏极电流 (Id @ 25°C):97A(Tc)
  • 驱动电压(Vgs):最大Rds On:10V,最小Rds On:10V
  • 导通电阻(Rds(on)):在58A和10V条件下,最大值为8.6毫欧;
  • 阈值电压(Vgs(th)):在150µA时的最大值为4V;
  • 栅极电荷(Qg):在10V驱动下最大为116nC;
  • 最大栅源电压(Vgs):±20V;
  • 输入电容 (Ciss):在50V时最大值为4476pF;
  • 功率耗散(Pd):最大功率耗散为221W(Tc);
  • 工作温度范围:-55°C至175°C(TJ);
  • 安装类型:通孔
  • 封装类型:TO-220AB

三、应用场景

IRF100B202广泛应用于需要高效率和高功率的场合,如:

  1. 电源管理:在开关电源、DC-DC转换器中提供高效的开关性能。
  2. 电机驱动:用于各种电机驱动应用中,如伺服电机和步进电机,确保高效能和快速响应。
  3. 工业控制:在工业自动化和控制系统中,作为开关元件支持高电流和高电压的应用。
  4. 汽车电子:适用于汽车中的各类电子控制单元及电力转换模块。
  5. 高温环境应用:其宽广的工作温度范围使其非常适合需要高可靠性的高温环境应用。

四、性能特点

  1. 低导通电阻:8.6毫欧的导通电阻能够显著降低功耗,提高系统整体效率,尤其在大电流应用中表现突出。
  2. 高功率处理能力:221W的最大功率散热能力,使该器件能够在苛刻条件下稳定工作,提升系统的可靠性。
  3. 宽工作温度范围:-55°C至175°C的工作温度范围保证了在多种极端环境下均能可靠运行,适合军事、航空航天及深海应用。
  4. 良好的切换性能:较低的栅极电荷(116nC)有助于减少驱动功耗,为高频开关提供更快的响应时间。

五、总结

IRF100B202 N通道MOSFET以其卓越的性能、耐高温和高功率特性,被广泛应用于多个领域。无论是在电源管理、工业控制,还是在汽车电子及高温环境应用中,该器件均展现出了高可靠性和优异的电气性能。凭借其较低的导通电阻、高功率散热能力及宽广的工作温度范围,IRF100B202不仅提升了系统的效率,还有助于确保长时间稳定运行。作为Infineon(英飞凌)品牌的一部分,这款MOSFET传承了优秀的设计和制造工艺,确保了高质量和优良的市场竞争力。

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