WMSIC Electronic Components

Infineon IRFR3806TRPBF

ModelIRFR3806TRPBF
PackageTO-252
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFR3806TRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFR3806TRPBF
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.481g
Electronic Component
1
Electronic Component
BM0166527056
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
71W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRFR3806TRPBF

概述

IRFR3806TRPBF 是一款高性能的 N 通道 MOSFET,属于 Infineon Technologies 的 HEXFET® 系列。这款场效应管设计用于各种高效能电源管理和开关应用,具备显著的导通电阻和宽广的工作温度范围,非常适合于工业、消费电子及汽车行业的多种应用。

技术参数

  • 制造商: Infineon Technologies
  • 系列: HEXFET®
  • 类型: N 通道 MOSFET
  • 封装类型: TO-252-3 (D-Pak)
  • 零件状态: 有源
  • 最大功率耗散: 71W(在 Tc 条件下)
  • 连续漏极电流 (Id): 43A(在 25°C 时,Tc)
  • 漏源电压 (Vdss): 60V
  • 驱动电压 (Vgs): 10V (最大 Rds On 和最小 Rds On)
  • 导通电阻 (Rds(on)): 15.8 mΩ (在 Id=25A,Vgs=10V 时)
  • 最大栅极阈值电压 (Vgs(th)): 4V (在 50µA 条件下)
  • 最大工作温度: -55°C ~ 175°C (TJ)
  • 电荷特性: 最大栅极电荷 (Qg) 为 30nC (在 10V 条件下)
  • 输入电容 (Ciss): 1150pF (在 50V 条件下)
  • 栅极极限电压 (Vgs): ±20V

典型应用

IRFR3806TRPBF 适用于广泛的应用场合,其中包括:

  1. 开关电源: 由于其低导通电阻,能够有效减少功耗,提高系统效率。
  2. 电动机驱动: 在各类电动机控制系统中,提供快速的开关响应和高效率。
  3. 电池管理系统: 适用于新能源汽车和电池充电器中的电流开关和保护电路。
  4. 负载开关: 可以作为高功率设备的负载开关,满足持续和瞬时的电流需求。

性能优势

IRFR3806TRPBF 的设计使其在许多场景下表现出色:

  • 高效能: 低导通电阻 (Rds(on)) 的特性使得小损耗电流,进而提高整体的能效。
  • 高工作温度: 其宽广的工作温度范围 (-55°C ~ 175°C) 使得在极端环境中依然能够可靠工作。
  • 紧凑的封装: 使用 DPAK 封装的表面贴装型设计,适合现代 PCB 布局,节约空间和简化设计。

性能特性

在电气性能方面,IRFR3806TRPBF 设计精良,能够提供如下显著优势:

  • 栅极电荷: 其低栅极电荷特性意味着更快的开关速度,适合高频应用。
  • 输入电容特性: Ciss 值的优化,意味着在开关情况下,MOSFET 可以更快地响应信号,提高开关效率。

结论

综上所述,IRFR3806TRPBF 是一款出色的 N 通道 MOSFET,适用于需求严格的高功率应用。凭借其高耐压、低导通电阻和良好的热性能,它为工程师提供了灵活性和高效能解决方案,满足现代电子设备的性能需求。无论是用于电源管理、马达控制还是高效的负载开关,IRFR3806TRPBF 都是一个值得信赖的选择。

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