WMSIC Electronic Components

Infineon IRFL024ZTRPBF

Infineon IRFL024ZTRPBF
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Product image

ModelIRFL024ZTRPBF
PackageSOT-223
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFL024ZTRPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFL024ZTRPBF
Electronic Component
1
Package
SOT-223
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.296g
Electronic Component
1
Electronic Component
BM0000208817
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2.8W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
55V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述 - IRFL024ZTRPBF

制造商：Infineon Technologies
系列：HEXFET®
类型：N通道MOSFET

产品简介

IRFL024ZTRPBF是一款高性能的N沟道MOSFET，属于Infineon的HEXFET®系列。该元器件采用SOT-223封装，适合表面贴装，广泛应用于功率管理、开关电源及各种电子设备中。凭借其卓越的电压和电流性能，IRFL024ZTRPBF是电源设计师和工程师的理想选择。

主要参数

  • 漏源电压 (Vdss): 55V
  • 连续漏极电流 (Id): 5.1A (在25°C环境温度下)
  • 驱动电压 (Vgs): 最大值为±20V
  • 导通电阻 (Rds(on)): 57.5毫欧 (在Id=3.1A，Vgs=10V时)
  • 栅极阈值电压 (Vgs(th)): 最大值为4V (在250µA的漏电流条件下)
  • 功率耗散: 最大值为1W (在环境温度下)
  • 工作温度范围: -55°C至150°C (结温TJ)
  • 栅极电荷 (Qg): 最大值为14nC (在Vgs=10V时)
  • 输入电容 (Ciss): 最大值为340pF (在Vds=25V时)

结构与封装

IRFL024ZTRPBF采用SOT-223封装设计，具有紧凑的体积和高度的可靠性，非常适合有限空间的电路板设计。该封装支持表面贴装技术，简化了组装和焊接工艺，提高了生产效率。

应用场景

IRFL024ZTRPBF MOSFET的特性使其适用于各种应用场景，包括但不限于：

  1. 开关电源：利用其高频开关能力和低导通电阻，显著提高转换效率。
  2. DC-DC转换器：在不同电压之间有效调节功率，确保设备高效运行。
  3. 电机驱动：控制电机的启停及转速调节，实现对电动机的精确控制。
  4. 电源管理：广泛应用于各种电子产品中，实现过流保护和其他电源管理功能。
  5. LED驱动电路：可用于高效的LED驱动电路，增强照明效果。

性能优势

  1. 高效能：因其低导通电阻和高最大漏源电压，IRFL024ZTRPBF MOSFET能够有效降低能量损耗，提升整体电路效率。
  2. 宽广的工作温度范围：该MOSFET可以在恶劣环境下稳定工作，适用于汽车电子、工业设备等高温应用场合。
  3. 高可靠性：基于Infineon的先进制造工艺，IRFL024ZTRPBF在长期使用中展现出良好的热稳定性和电气耐受性。
  4. 易于驱动：较低的栅极电荷简化了驱动电路的设计，实现了更快速的开关性能，适合高速应用。

结论

IRFL024ZTRPBF是一款可靠且高效的N沟道MOSFET，凭借其优异的电气特性和灵活的应用范围，成为现代电源管理和开关应用中的重要选择。无论是在设计新产品，还是在升级现有设备，IRFL024ZTRPBF都能提供强大的性能支持，帮助科技工程师实现更高效、紧凑的电路设计。选择IRFL024ZTRPBF，无疑是您追求高性能和高可靠性电子元器件的明智之选。

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