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Infineon IRFS7534TRLPBF
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRFS7534TRLPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRFS7534TRLPBF
- Electronic Component
- 1
- Package
- D2PAK
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.1g
- Electronic Component
- 1
- Electronic Component
- BM0222753734
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 294W
- Electronic Component
- Electronic Component
- Electronic Component
- 800
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IRFS7534TRLPBF
IRFS7534TRLPBF 是一种高性能 N 通道金属氧化物半导体场效应管（MOSFET），由德国 Infineon Technologies 公司生产。该MOSFET是其 HEXFET® 和 StrongIRFET™ 系列中的一员，专为高效率和高功率应用设计，广泛应用于电力转换、马达驱动、开关电源和其他高电流/高电压的电子设备中。
关键参数
类型与结构：
- IRFS7534TRLPBF 是一个 N 通道 MOSFET，采用 D²PAK（TO-263AB）封装，具有出色的热管理性能和电气特性。
- 此产品主要用于高电流操作的场合，确保在高功率情况下的良好导电性和低开关损耗。
电气特性：
- 最大漏极电流（Id）: 195A（在 Tc = 25°C 条件下）。
- 漏源电压（Vdss）: 60V，适合于中高电压的应用场合。
- 栅极电压（Vgs）: 最大值为 ±20V，为电路设计提供了更大的灵活性。
- 最大 Rds(on): 仅为 2.4 毫欧（在 Id = 100A，Vgs = 10V 时），确保了极低的导通电阻，从而降低功耗。
- 栅极阈值电压（Vgs(th)）: 最高可达 3.7V（在 250µA 条件下），这意味着MOSFET可在低栅电压下有效开启。
- 功率耗散（Pd）: 294W（在 Tc 条件下），允许在恶劣的环境下工作，确保器件的可靠性和稳定性。
动态特性：
- 栅极电荷（Qg）: 最大值为 279nC（在 Vgs = 10V 时），关键参数之一，影响开启和关闭时间，对高频开关应用尤为重要。
- 输入电容（Ciss）: 最大值为 10034pF（在 Vds = 25V 时），用于评估在高频操作时的驱动能力和开关速度。
工作环境：
- 工作温度范围广泛，介于 -55°C 至 175°C，适应各种极端温度条件，特别适合高温环境下的应用。
- 封装设计为表面贴装型（SMD），使得在电路设计中能够实现更高的集成度，减小电路板面积。
应用场景
IRFS7534TRLPBF 适用领域广泛，因此是一种理想的选择，适用于如下应用：
- 电源转换：在开关电源及DC-DC转换器中作为主开关元件，提供高效的电力转换和低损耗运行。
- 马达控制：可用于直流电机及步进电机的驱动电路中，提供平稳的电流控制和良好的动态响应。
- 高效照明：作为高亮度 LED 驱动电路的开关器件，能够达到高效率和长使用寿命。
结论
IRFS7534TRLPBF 是一款强大的 N 通道 MOSFET，凭借其出色的电气性能和广泛的应用领域，成为当今高效率电子设计中的一项重要元件。由于其低导通电阻、高功率处理能力和广泛工作温度范围，适用于多种高功耗应用，能够显著提高电路的整体效率和可靠性。无论是在电力电子、工业自动化还是消费电子领域，IRFS7534TRLPBF 都是实现高性能电子设计的重要工具。
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