WMSIC Electronic Components

Infineon IPD900P06NM

ModelIPD900P06NM
PackageTO-252-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon IPD900P06NM
Type
INFINEON
Minimum package
2500 未知

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IPD900P06NM
Electronic Component
1
Package
TO-252-3
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.41g
Electronic Component
1
Electronic Component
BM0228685653
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
63W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V
Capacitor(Ciss)
1.1nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IPD900P06NM 产品概述

一、概述

IPD900P06NM 是英飞凌(Infineon)推出的一款 P 沟道功率 MOSFET,额定漏源电压 60V,适用于中低压高侧开关与功率管理场合。器件采用 TO-252-3(DPAK)表面贴装封装,兼顾热性能与可制造性,单片数量:1 个 P 沟道。

二、主要性能参数

  • Vdss(漏源电压):60V
  • RDS(on)(导通电阻):90 mΩ @ VGS = 10V, Id = 16.4A
  • 连续漏极电流 Id:12.7A(受热与封装限制的连续电流能力)
  • 总栅极电荷 Qg:27 nC @ VGS = 10V(影响开关损耗与驱动需求)
  • 输入电容 Ciss:1.1 nF @ 30V;反向传输电容 Crss:39 pF @ 30V
  • 功耗 Pd:63W(器件额定耗散,需配合散热设计)

三、开关与驱动要点

栅极电荷 27 nC 表明开关过程需要合适的驱动能力。举例:若要求 20 ns 的开通斜率,驱动电流峰值约为 Qg/t ≈ 1.35 A;驱动损耗约为 Pdrive = Qg·Vdrive·fs,即在 100 kHz 时约为 27 mW(Vdrive = 10V)。Ciss 对开关能量影响为 E ≈ 0.5·Ciss·V^2 ≈ 55 nJ/次,可用于估算转换损耗。

四、热性能与封装

TO-252-3(DPAK)提供较好的热路径,适合贴片焊接在铜箔较大的散热焊盘上以降低结-壳、结-环境热阻。器件额定耗散 63W 为理想条件(低结温、良好散热)下的值,实际应用中需根据 PCB 面积、通孔与散热层做热仿真与布局。

五、典型应用

  • 中低压高侧负载开关与电源管理(如电池供电系统高侧断开)
  • 便携设备或汽车电子中的反接保护与电源路径选择(需注意温度与可靠性要求)
  • 线性或开关调节器中的负载开关单元(低频或中频应用更为合适)

六、选型与使用建议

  • 确认 VGS 驱动电压与控制逻辑匹配(推荐 10V 驱动以达到标称 RDS(on))
  • 根据最大工作电流计算导通损耗 Pcond = I^2·RDS(on),例如在 12.7A 时约 14.5W,需评估散热能力;短脉冲允许峰值更高但受封装限值约束
  • 优化 PCB 布局:减小源引线阻抗,增强散热铜箔,靠近驱动 IC 布置以减少寄生电感与 ringing
  • 若用于开关频率较高的场合,关注 Qg 与 Crss 导致的开关损耗与电磁干扰,必要时使用缓冲或阻尼网络

总结:IPD900P06NM 集中体现了在 60V 级别下 P 沟道 MOSFET 的平衡性能——适合中等电流、高侧开关与电源管理用途。设计时应结合实际热设计与驱动能力,确保器件在额定条件下稳定工作。

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