WMSIC Electronic Components

Infineon IRFB5615PBF

ModelIRFB5615PBF
PackageITO-220AB-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFB5615PBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFB5615PBF
Electronic Component
1
Package
ITO-220AB-3
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
2.861g
Electronic Component
1
Electronic Component
BM0222749470
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
144W
Electronic Component
Electronic Component
Electronic Component
1000
Voltage(Vdss)
150V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFB5615PBF 产品概述

概述

IRFB5615PBF 是一款高性能的 N 沟道金属氧化物场效应管(MOSFET),由知名半导体制造商英飞凌(Infineon)生产。这款 MOSFET 的设计目标是提供高效率、低导通电阻和出色的功率处理能力,广泛应用于工业、消费电子及电动汽车等领域。

主要技术参数

  • 漏源电压(Vdss): 150V
  • 连续漏极电流(Id): 35A(在 25°C 条件下)
  • 栅源极阈值电压(Vgs(th)): 5V @ 100µA
  • 漏源导通电阻(Rds(on)): 39mΩ @ 21A, 10V
  • 最大功率耗散(Pd): 144W (在 Tc=25°C)
  • 工作温度范围: -55°C 至 175°C

这款 MOSFET 的额定漏源电压为 150V,使其适用于高电压应用。其 35A 的连续漏极电流能力提供了充足的电流处理能力,非常适合高功率电路。此外,具有较低的导通电阻(Rds(on))39mΩ,可以显著降低功耗和热量产生。

封装与安装

IRFB5615PBF 采用 TO-220AB 封装,这种封装样式在实际应用中具有很好的散热效果和可靠的机械强度,适合于高功率和高温环境下的使用。TO-220 的设计也便于安装到各种散热器上,进一步增强了其热管理能力。

性能优势

  1. 高效能: 低导通电阻和较高的功率耗散能力使得 IRFB5615PBF 在功率转换和放大应用中表现出色,能够有效减少能量损失和发热。

  2. 宽工作温度范围: -55°C 至 175°C 的广泛工作温度范围,使得该器件适用于极端环境,在航空航天、汽车和工业设备等应用中都能保持可靠性能。

  3. 强大的驱动能力: 栅极电荷 (Qg) 为 40nC @ 10V,使得 IRFB5615PBF 能够在快速开关应用中提供良好的性能,有助于提高整体电路效率。

应用领域

IRFB5615PBF 的设计使其适用于多个应用领域,其中包括但不限于:

  • 开关电源:高频开关电源及其它电源转换器件,如 AC-DC 转换器和 DC-DC 转换器。
  • 电流驱动电路:如电动机驱动、伺服控制和自动化设备。
  • 电动汽车:作为功率开关用于电动汽车的驱动系统及充电系统。
  • 白色家电:如洗衣机、冰箱等家电产品的控制系统中。

结论

作为一款综合性能优异的 N 沟道 MOSFET,IRFB5615PBF 以其高漏源电压、低导通电阻及出色的功率耗散能力,成为许多电源和驱动应用的理想选择。工程师们可以依赖其在恶劣环境下的稳定性和出色的热管理能力,为各种电子设备的高效运作提供支持。无论是在消费电子、工业控制还是电动汽车等领域,IRFB5615PBF 都显示出极高的应用价值和广泛的适应能力。

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