WMSIC Electronic Components

Infineon 2EDL05N06PF

Model2EDL05N06PF
PackageSOP-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon 2EDL05N06PF
Type
INFINEON
Unit
Electronic Component
Minimum package
2500

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
2EDL05N06PF
Electronic Component
1
Package
SOP-8
Electronic Component
(UVP)
Electronic Component
Gate Driver IC
Electronic Component
0.172g
Electronic Component
1
Features
Built-in Diode
Electronic Component
BM0257621574
Operating Temperature
40℃~+105℃
Operating Voltage
10V~17.5V
Load Type
MOSFET
Driver
Electronic Component
Current(IOH)
360mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2EDL05N06PF 产品概述

一、概述

2EDL05N06PF 是英飞凌系列面向中高压功率开关应用的半桥栅极驱动器,集成双通道输出并适配 MOSFET 驱动需求。器件为 SOP-8 封装,适用于需要紧凑布局和成本受控的电源与逆变器设计。其设计目标是为 600V 级开关器件提供可靠、响应迅速的栅极驱动能力,兼顾开关速度与电磁兼容(EMC)控制,适用于功率因数校正(PFC)、逆变器、电机驱动、开关电源等应用场景。

二、主要参数(关键规格)

  • 驱动结构:半桥(high-side + low-side 支持或独立两通道)
  • 负载类型:专为 MOSFET 驱动优化
  • 驱动通道数:2(双通道)
  • 灌电流(IOL,sink):700 mA
  • 拉电流(IOH,source):360 mA
  • 工作电压(VCC 驱动电源):10 V ~ 20 V(典型驱动电压 10–12 V)
  • 上升时间(tr):48 ns
  • 下降时间(tf):24 ns
  • 工作结温范围(Tj):-40 ℃ ~ +150 ℃
  • 额定耐压等级:600 V(用于与高压功率开关配合的系统拓扑)
  • 封装:SOP-8,适合标准线路板安装与批量生产

三、功能与特性亮点

  • 双通道集成,缩减外部元件数量与 PCB 占板面积。
  • 较高的灌放电能力(700 mA / 360 mA),能满足绝大多数中小功率 MOSFET 在开关瞬态时的电荷快速充放需求,从而控制开关损耗与开关时间。
  • 宽工作电压范围(10~20 V),适配常见的 10–12 V 驱动电压并为某些耐高温或长线损应用提供裕量。
  • 上升/下降时间经过优化,可在兼顾开关损耗和 EMI 的前提下实现较快开关响应。
  • 宽温度范围的结温等级,适合工业级和高温应用。

四、典型应用

  • 一相/三相逆变器(太阳能逆变器、中小型电机驱动)
  • 主动功率因数校正(PFC)电路
  • 开关电源(SMPS)、复合拓扑中主/副开关驱动
  • 感应加热、焊接等工业开关场景
  • 储能和不间断电源(UPS)系统

五、设计与使用建议

  • 供电与旁路:VCC 必须稳健且靠近芯片放置低 ESR 陶瓷电容(如 100 nF~1 µF)作为旁路电容,减少瞬态电压降。高侧若采用引导电路(bootstrap),建议使用合适的 bootstrap 二极管和电容容量以支持高频切换时的驱动电荷。
  • 栅极电阻选择:根据开关速度与 EMI/振铃控制权衡选择 Rg。一般中速切换时可选 4.7 Ω10 Ω;高频或高应力场合可采用 14.7 Ω;需要更慢边沿减少 EMI 时可增大。
  • VGS 保护:为防止过压或负向脉冲,建议在栅极与源极之间并联 TVS 或 Zener 二极管,或在栅极回路设计 RC 抑制网络以抑制振铃。
  • 布局要点:将驱动器、供电旁路、bootstrap 电容和 MOSFET 的栅极电阻尽量靠放置并缩短连线,减少回路电感。单点接地(star ground)能有效降低共模噪声影响。
  • 热管理:尽管 SOP-8 体积小,仍需关注结温。在高频或高占空比场合注意驱动器在驱动瞬态时的功耗累积,保证 PCB 散热和环境温度在安全范围内,使 Tj 不超过 150 ℃。

六、可靠性与注意事项

  • 在高压半桥拓扑中,浮动节点的 dv/dt 可能在驱动芯片内部产生寄生应力,设计时应考虑隔离措施与合适的 dv/dt 限制。
  • 在高温或长时间重载运行时,关注结温与封装散热能力,避免长期接近最大 Tj 上限以延长寿命。
  • 对于关键应用,建议对样机进行电磁兼容测试、热循环与电应力验证,确保在目标工作工况下稳定可靠。

通过合理的外围电路设计与布局控制,2EDL05N06PF 能在 600V 级别半桥系统中提供稳定、迅捷且经济的栅极驱动能力,是面向工业与电力电子设计的实用选择。

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