WMSIC Electronic Components

Infineon BSC052N03LSATMA1

Infineon BSC052N03LSATMA1
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Product image

ModelBSC052N03LSATMA1
PackageTDSON-8
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

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Technical data

Product details

19 specifications

Core information

Product name
Infineon BSC052N03LSATMA1
Type
INFINEON
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC052N03LSATMA1
Electronic Component
1
Package
TDSON-8
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.14g
Electronic Component
1
Electronic Component
BM0183305387
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
28W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：BSC052N03LSATMA1

1. 引言

BSC052N03LSATMA1是由Infineon Technologies制造的一款高性能N通道MOSFET，属于OptiMOS™系列。该器件特别适合于需要高效电流控制及低导通电阻的电子应用，广泛应用于电源管理、DC-DC转换器和电机驱动等场景。凭借其出色的热管理和高开关效率，BSC052N03LSATMA1能够显著提高系统的可靠性和性能。

2. 基本参数

  • 制造商：Infineon Technologies
  • 系列：OptiMOS™
  • 封装类型：TDSON-8（表面贴装型）
  • 工作温度范围：-55°C 至 150°C
  • 漏源电压：30V
  • 连续漏极电流：
    • 在环境温度（Ta）下：17A
    • 在晶体管通道温度（Tc）下：57A
  • 功率耗散：
    • Ta：2.5W
    • Tc：28W

3. 关键特性

  • 导通电阻：在10V驱动下，最大导通电阻为5.2毫欧@30A，显示出低开关损耗和出色的效率。
  • 栅极阈值电压（Vgs(th)）：最大值为2V，确保在较低的栅驱动电压下即可开启，适用于多种控制电路。
  • 栅极电荷（Qg）：最大值为12nC@10V，意味着其在开关频率较高时能够有效降低控制功耗。
  • 输入电容（Ciss）：最大值为770pF@15V，降低了驱动电路的负担，提升了整体系统的响应速度。

4. 应用场景

BSC052N03LSATMA1的卓越性能使其适用于多个领域：

  • 电源管理：在DC-DC转换器中，由于其低导通电阻，能有效提升转换效率，减少功耗。
  • 电机驱动：在电机控制系统中应用，以实现高效的电流切换，有利于改善电机性能和延长使用寿命。
  • 消费电子：可用于高性能充电器、便携式设备等领域，提供高效的电源解决方案。

5. 设计考虑

在使用BSC052N03LSATMA1时，设计工程师应考虑如下因素：

  • 散热管理：尽管该MOSFET具有较高的功率耗散能力，但根据实际的应用环境和电流负载，需要进行适当的散热设计以避免过热。
  • PCB布局：针对其封装特点，合理的PCB布局将有助于提高电气性能和热管理。
  • 栅极驱动电路：推荐采用能够提供足够驱动电压（至少10V）的驱动电路，以确保MOSFET的高效运行。

6. 结论

总体来说，BSC052N03LSATMA1是一款具有优越性能的N通道MOSFET，适合多种高要求的应用场合。它的低功耗特性与宽工作温度范围使其成为电源管理和电机驱动的理想选择。工程师在设计中选用此器件，不仅能够提高系统效率，而且还可以优化整体设计的可靠性，为最终用户带来更好的使用体验。Infineon Technologies凭借其创新技术和行业经验，确保了BSC052N03LSATMA1在电子元器件市场中的竞争力及实用性。

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