WMSIC Electronic Components

Infineon IPN60R2K1CEATMA1

ModelIPN60R2K1CEATMA1
PackageSOT-223-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon IPN60R2K1CEATMA1
Type
INFINEON
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IPN60R2K1CEATMA1
Electronic Component
1
Package
SOT-223-3
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
0g
Electronic Component
1
FET
Electronic Component
FET Type
N
Electronic Component
BM0264596744
Type
Surface Mount
Operating Temperature
40°C ~ 150°C(TJ)
Package / Housing
SOT-223-3
Vgs
±20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IPN60R2K1CEATMA1 产品概述

一 概述与主要特性

IPN60R2K1CEATMA1 是英飞凌(Infineon)推出的一款 N 沟道超级结 MOSFET,额定漏源电压 600V,适用于高压开关应用。器件为表面贴装 SOT-223-3(PG-SOT223)封装,面向中小功率的开关电源与功率转换场合。主要参数包括:连续漏极电流 3.7A(在散热台 Tc 条件下)、最大导通电阻 2.1Ω(典型测值:800mA、VGS=10V 时)、以及较高的能量效率和耐压裕量。

二 电气与热特性

关键电气指标:VDS = 600V,VGS 最大±20V;阈值电压 VGS(th) 最大 3.5V(测量电流 60µA);栅极电荷 Qg 最大 6.7nC(VGS=10V);输入电容 Ciss 最大 140pF(VDS=100V)。器件功耗 Pd 最大 5W(基准于 Tc),工作结温范围 TJ = -40°C 至 150°C。注意标注的 Id 为在器件温度控制(Tc)条件下的连续电流,实际 PCB 散热能力会显著影响允许的功率损耗。

三 应用场景

适合用作高压开关元件的场合,包括开关电源(反激/正激/单端反激)、功率适配器、LED 驱动、初级侧功率开关及 PFC 电路的中低功率段。600V 耐压与超级结工艺令其在高压转换中兼顾开关损耗与导通损耗,适用于成本与性能平衡的设计。

四 驱动与开关性能要点

推荐栅压 10V 驱动以达到规格中的最小 RDS(on);由于 Qg≈6.7nC,驱动回路需提供足够的瞬时电流以获得快速开关,适当配置栅极电阻(串联 RG)可抑制振铃与 EMI。注意避免超过 VGS ±20V 以防击穿;在高压快速开关时关注能量回收和开关应力,必要时加入缓冲或钳位电路保护。

五 封装与热管理注意事项

SOT-223-3 封装体积小、适合表贴生产,但散热能力有限。要在 PCB 设计中留出充足的铜箔散热区域、通过热导垫或加大焊盘面积降低结壳温升。对于长时间高功耗工作场合,建议基于实际应用进行热仿真并验证结温 TJ 不超限。

六 选型与设计建议

选用 IPN60R2K1CEATMA1 时若关注更低导通损耗或更高持续电流,应比较更低 RDS(on) 或更大封装的产品;若需更快开关、降低开关损耗,可考虑栅极驱动能力更强的驱动器或低 Qg 型号。常规设计中,确保驱动电压为 10V、布局减少寄生电感、并做好热管理,可发挥该器件在 600V 级应用中的稳定表现。

如需该器件完整数据手册(datasheet)、典型应用电路或 PCB 散热建议,可进一步提供具体应用场景与电气条件,以便给出更精确的设计指导。

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