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Infineon IRLR2905TRPBF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRLR2905TRPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRLR2905TRPBF
- Electronic Component
- 1
- Package
- DPAK(TO-252AA)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 5.49g
- Electronic Component
- 1
- Electronic Component
- BM0000285945
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 110W
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRLR2905TRPBF 产品概述
产品简介： IRLR2905TRPBF是一款高性能的N通道MOSFET（场效应管），由知名品牌Infineon（英飞凌）生产。该器件采用表面贴装型TO-252-3（D-Pak）封装，适用于各种高电压和高电流应用，主要服务于电力电子、自动化控制和其他需要稳健性能的场合。
关键参数：
- 漏源电压（Vdss）: 55V
- 连续漏极电流（Id）: 42A @ 25°C（在合理的热管理条件下）
- 最大功耗（PD）: 110W（社温情况下）
- 导通电阻（Rds On）: 在10V时，25A时的最大值为27毫欧，意味着在此电流值下，器件的电阻导致的功耗相对较低，有助于提高整体电能效率。
电气特性：
- 驱动电压（Vgs）: 该器件支持的驱动电压范围为4V到10V，在这些电压下能够实现最佳的导通状态。
- 门阈电压（Vgs(th)）: 最大值为2V @ 250μA，确保在较低的栅极驱动电压下就可以被激活，使其在低供电电压的应用中也能够正常工作。
- 栅极电荷（Qg）: 最大值为48nC @ 5V，这表明在开关频率较高的应用中，可以实现较快的开关速度。
频率响应与驱动能力： IRLR2905TRPBF设计的输入电容（Ciss）最大值为1700pF @ 25V，能够支撑相对较高的开关频率，同时保证栅极动态响应优异。此外，在涉及快速开关应用时，其较小的栅极电荷值使得可以使用较小的驱动电流，从而降低驱动电路的功耗。
工作环境： 该MOSFET具有宽广的工作温度范围，-55°C至175°C，使得其在极端环境下依旧能够可靠工作。此特性使其特别适合用于汽车电子、航空航天以及工业控制设备等应用。
应用领域： IRLR2905TRPBF广泛应用于逆变器、DC-DC转换器、马达驱动器以及其他需要高效电源管理的电子系统。由于其优越的导通特性和低导通电阻，它在需要高效功率转换和电流控制的电路中尤为出色。
结论： IRLR2905TRPBF作为一款高效的N通道MOSFET，凭借其出色的电气性能和广泛的应用适用性，成为许多现代电子设备的重要组成部分。无论是在功率转换、马达控制还是模块化电源管理中，它都能满足用户的高效率和高性能要求。选择IRLR2905TRPBF能够有效提升电子系统的整体性能和可靠性，是工程师和设计师们在开发高效智能电子产品时的重要选择。
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