WMSIC Electronic Components

Infineon IRFB4410ZPBF

ModelIRFB4410ZPBF
PackageTO-220AB
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFB4410ZPBF
Type
INFINEON
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFB4410ZPBF
Electronic Component
1
Package
TO-220AB
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
2.64g
Electronic Component
1
Electronic Component
BM0000285931
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
230W
Electronic Component
Electronic Component
Electronic Component
1000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:IRFB4410ZPBF

IRFB4410ZPBF是一款高性能的N沟道金属氧化物半导体场效应管(MOSFET),专为高功率应用设计,具备卓越的电气特性和散热能力。此器件由国际知名的半导体制造商英飞凌(Infineon)生产,封装类型为TO-220AB,能够有效满足各种工业和商业应用的需求,特别是需要高效率、低导通损耗的领域。

主要规格

  1. 额定电压与电流:

    • 漏源电压(Vdss)达到100V,适合大多数中高压应用。
    • 连续漏极电流(Id)在25°C时为97A,确保在高电流工作条件下的可靠性和稳定性。
  2. 导通电阻:

    • 在10V的栅源驱动下,最大漏源导通电阻(Rds_on)为9毫欧,这一低阻值使得IRFB4410ZPBF在大电流情况下表现出较高的能效,减少了能量损耗和发热。
  3. 功率耗散:

    • 最大功率耗散值为230W,意味着它能够在高负荷状态下安全运行,无需担心热失效,前提是适当的散热措施得以实施。
  4. 温度性能:

    • 工作温度范围宽广,从-55°C到175°C,适合广泛的环境条件,包括极端的温度环境。这使其在军事和航空航天等高要求应用中更具优势。
  5. 栅源阈值电压与驱动电压:

    • 栅源极阈值电压(Vgs(th))在150µA时为4V,允许在相对较低的栅电压下有效控制MOSFET的开关。
    • 驱动电压为10V时表现出最佳导通性能,使其能够与大多数集成电路兼容。
  6. 电容特性:

    • 在50V的漏源电压下,输入电容(Ciss)最大值为4820pF,这对于高频开关应用是一个重要参数,能够影响开关频率和开关损耗。
  7. 栅极电荷:

    • 在10V时的栅极电荷(Qg)为120nC,较低的栅电荷含量能够实现更快的开关速度,减少开关损耗和提高系统的整体效率。

应用场景

IRFB4410ZPBF的特性使其非常适合用于各种应用场景,包括:

  • DC-DC转换器:在电源管理系统中,MOSFET起到了开关作用,能够高效地转换电压和电流。
  • 电机驱动:在电机驱动控制中,能够实现高效的电机控制,提升电机的运行效率和节能效果。
  • 电源管理系统:在电池充电器和不间断电源(UPS)中,IRFB4410ZPBF可以稳定输出功率并提高系统性能。
  • 高频开关电源:可用于高频音响、射频功率放大器等领域,能够提供快速的开关响应。

结论

IRFB4410ZPBF凭借其卓越的电气特性和宽广的工作温度范围,成为高性能电子设备中使用的理想MOSFET选择。无论是在工业自动化、消费电子、还是军事和航空航天应用,该器件都能确保长时间稳定工作并且有效降低能量消耗。其在高功率和高频应用中的表现,为设计师提供了灵活的解决方案,使得产品在市场中的竞争力得以提升。

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