WMSIC Electronic Components

Infineon IPAN70R360P7S

ModelIPAN70R360P7S
PackageTO-220FP-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon IPAN70R360P7S
Type
INFINEON
Minimum package
500 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IPAN70R360P7S
Electronic Component
1
Package
TO-220FP-3
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
3.3g
Electronic Component
1
Electronic Component
BM0127574306
Operating Temperature
40℃~+150℃
Power Dissipation(Pd)
26.5W
Electronic Component
Electronic Component
Electronic Component
500
Voltage(Vdss)
700V
Capacitor(Ciss)
517pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IPAN70R360P7S 产品概述

一、规格概览

IPAN70R360P7S 为英飞凌(Infineon)推出的高压功率MOSFET(N沟增强型),适用于交流-直流和开关电源前端场合。主要参数如下:

  • 漏源耐压 Vdss:700 V
  • 连续漏极电流 Id:12.5 A
  • 导通电阻 RDS(on):300 mΩ @ Vgs=10 V
  • 阈值电压 Vgs(th):3 V @ Id=0.15 mA
  • 总栅电荷 Qg:16.4 nC @ Vgs=10 V
  • 输入电容 Ciss:517 pF,输出电容 Coss:11 pF
  • 耗散功率 Pd:26.5 W
  • 工作温度:-40 ℃ ~ +150 ℃
  • 封装:TO-220FP-3(绝缘型或全封装散热形式)

二、主要特性与优势

该器件属于700V等级的中高压MOSFET,RDS(on) 在10V栅压下为300 mΩ,适合高压开关场合对导通损耗和耐压的平衡要求。较小的Coss(11 pF)有利于降低开关翻转期间的电容充放电损耗,Q g 适中,便于用常规栅极驱动器驱动。工作温度范围宽,能满足工业级和电源级的严苛环境。

三、驱动与开关性能要点

由于Vgs(th) ≈3 V(测试电流0.15 mA),器件并非严格的“低电平栅”逻辑MOSFET,推荐使用10–12 V的门极驱动电压以实现标称RDS(on)。栅极电荷Qg=16.4 nC 表明在中频率范围内(例如几十到几百kHz)门极驱动功率不大,但瞬态驱动电流峰值由驱动器输出能力及栅阻决定,应选用合适的栅阻(典型 10–100 Ω)以控制dv/dt 和振铃。建议在门极加装12–15 V电压钳位或齿形保护,防止过压。

四、热管理与可靠性

TO-220FP-3 封装提供便捷散热面,但在高功耗或连续工作场景下仍需外接散热器或考虑热阻与结-壳温度管理。最大功耗 ~26.5 W 在无散热条件下有限制,设计时按实际结温与散热条件计算安全余量。高温工作时 RDS(on) 会上升,应在热设计中预留裕量。

五、典型应用建议

  • 离线开关电源(主开关、辅助开关)
  • 功率因数校正(PFC)前端及续流回路(中低功率级)
  • LED 驱动与高压电源转换器
  • 工业电源与小型逆变器的高压侧开关

六、设计注意事项

布局上尽量缩短栅极回路和漏源回路的寄生电感,门极加串联电阻与并联TVS/瞬态吸收器以抑制过冲及高dv/dt。根据开关频率计算门极驱动器功率(Ig ≈ Qg × f),并为热失控与短路场景设计过流保护与热关断策略。

总结:IPAN70R360P7S 在700V等级中提供了平衡的导通电阻与开关性能,适合中高压开关电源与工业电源应用。合理的栅驱、良好的热设计与保护电路是发挥其可靠性与效率的关键。

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