WMSIC Electronic Components

Infineon IRF3808STRLPBF

ModelIRF3808STRLPBF
PackageD2PAK
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon IRF3808STRLPBF
Type
INFINEON
Minimum package
800 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRF3808STRLPBF
Electronic Component
1
Package
D2PAK
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
2g
Electronic Component
1
Electronic Component
BM0058402653
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
200W
Electronic Component
Electronic Component
Electronic Component
800
Voltage(Vdss)
75V
Capacitor(Ciss)
5.31nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRF3808STRLPBF 产品概述

一、概述

IRF3808STRLPBF 为 Infineon(英飞凌)出品的 75V 单个 N 通道 HEXFET 功率 MOSFET,采用 D2PAK 表面贴装封装,适用于中高功率开关与同步整流场合。器件设计侧重低导通损耗与耐高温能力,结温工作范围宽(-55℃ 至 +175℃,Tj),可满足工业级和汽车级较苛刻的环境要求。

二、主要电气参数

  • 漏-源电压(Vdss):75V
  • 导通电阻(RDS(on)):7 mΩ @ VGS = 10V, ID = 82A
  • 漏极连续电流(Id):106A(条件依散热与封装限制)
  • 门极阈值电压(Vgs(th)):4V(典型)
  • 总门极电荷(Qg):220 nC @ VGS = 10V
  • 输入电容(Ciss):5.31 nF @ 25V
  • 最大耗散功率(Pd):200W(取决于散热条件)
  • 工作结温范围:-55℃ ~ +175℃(Tj)

三、热与散热注意事项

D2PAK 为功率型表面贴装封装,热阻相对较低,但实际 Pd 和连续电流能力强烈依赖 PCB 铜箔面积与散热设计。推荐:

  • 在散热面使用大面积铜箔、多个热过孔将热量导至反面或散热片;
  • 评估实际结温时考虑 PCB 热阻和环境对流条件;
  • 在高耗散工况下建议外接散热片或采用强制风冷。

四、驱动与开关性能建议

Qg = 220 nC 表明门极电荷偏大,开关时需要较大电流驱动:

  • 使用专用驱动芯片或低阻抗门驱以获得快速且受控的开关;
  • 合理选择门极电阻,平衡上升/下降时间与振铃、EMI;
  • 对于高频开关应用,门驱能量和驱动拓扑需评估以控制开关损耗;
  • Vgs(th) ≈ 4V,建议驱动电压以 10V 为目标以获得标称低 RDS(on)。

五、应用场景与布局要点

适用场景包括:同步整流、DC-DC 转换器、降压/升压拓扑、马达驱动及功率开关。布局建议:

  • 将电流回路(漏-源)走短、粗的铜迹以降低电阻和电感;
  • 门极与驱动器之间走线尽量短且加退耦电容;
  • 高频开关处放置阻尼或 RC 吸收以降低电压尖峰;
  • 并联使用时匹配 RDS(on) 与驱动相位,加入平衡措施以避免应力集中。

六、封装与可靠性

D2PAK(TO-263)封装适合自动化贴装与回流焊工艺,机械和热循环性能适合大多数工业应用。器件在高温工作时需关注热循环疲劳与焊点可靠性,建议按应用环境做加速寿命评估。

总结:IRF3808STRLPBF 在 75V 档位提供极低的导通电阻(7 mΩ@10V)和较大的电流处理能力,适合追求低导通损耗的功率设计。但较大的门极电荷要求稳健的驱动方案与合理的散热设计,以实现最佳效率与长期可靠性。

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