WMSIC Electronic Components

Infineon IRFS7530TRL7PP

Infineon IRFS7530TRL7PP
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Product image

ModelIRFS7530TRL7PP
PackageTO-263-7
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon IRFS7530TRL7PP
Type
INFINEON
Unit
Electronic Component
Minimum package
800 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IRFS7530TRL7PP
Electronic Component
1
Package
TO-263-7
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
1.73g
Electronic Component
1
Electronic Component
BM0058398764
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
375W
Electronic Component
Electronic Component
Electronic Component
800
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFS7530TRL7PP 产品概述

产品名称： IRFS7530TRL7PP
品牌： 英飞凌（Infineon）
类型： N沟道MOSFET
封装类型： TO-263-7
应用领域： 开关电源、DC-DC转化器、电动汽车、工业控制、以及高效能电源管理系统等。

关键参数

IRFS7530TRL7PP 是英飞凌公司出品的一款高性能N沟道金属氧化物场效应管（MOSFET），其主要技术规格包括：

  • 漏源电压（Vdss）: 60V
  • 持续漏极电流（Id）: 25°C的环境下可达240A（在适当的散热条件下）
  • 栅源极阈值电压（Vgs(th）: 3.7V @ 250µA，表明了MOSFET开通所需的最小栅源电压。
  • 漏源导通电阻（Rds(on）: 1.4mΩ @ 100A, 10V，表示在高电流下的优异导电性能，能够有效降低开关损耗。
  • 最大功率耗散（Pd）: 375W（在250°C时，以适当的散热条件下），表明了其在高功率应用中的适用性。
  • 工作温度范围: -55°C至175°C，保证了在严苛环境下的可靠性。

物理特性

该器件采用TO-263-7封装设计，结合表面贴装技术，提供良好的散热性能和安装便利性。该封装不仅有效利用了板级空间，同时也兼顾了器件的散热管理能力。

电气特性

IRFS7530TRL7PP的输入电容（Ciss）在25V时为12960pF，极低的输入电容使其能够快速开关，适合高速开关应用。栅极电荷（Qg）最大值为354nC @ 10V，这使得驱动电路设计更加简便，降低了开关损耗。

应用优势

此款MOSFET适用于多种电力电子应用，可在高电流和高频开关条件下发挥出色性能。其低Rds(on)和高热功耗处理能力，使得该器件在功率管理、汽车电子以及工业控制中日益受到青睐。

典型应用场景

  1. 开关电源（SMPS）: 在AC-DC及DC-DC转换系统中充当主开关，以高效地转化电能。
  2. 电动汽车驱动系统: 作为逆变器中的功率开关，实现高效能电机驱动。
  3. 电子负载及电源驱动: 在高负载下提供稳定的电流输出，满足工业自动化需求。
  4. 功率放大器: 在RF应用中作为输出级开关器件，实现增强信号的放大效果。

总结

IRFS7530TRL7PP是一款具有高功率密度、高效能、宽工作温度范围的N沟道MOSFET，适合各种高频开关和功率管理应用。作为英飞凌的明星产品之一，它凭借卓越的电气特性和物理设计，为客户提供了高效的解决方案，助力现代电子应用的高效与安全。无论是在极端环境下工作，还是在高负载条件下，IRFS7530TRL7PP都展现出其优越的性能和可靠性，是现代电力电子设计中不可或缺的重要元器件之一。

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