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Infineon IR21271STRPBF
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IR21271STRPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IR21271STRPBF
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- (UVP)
- Electronic Component
- Gate Driver IC
- Electronic Component
- 0.198g
- Electronic Component
- 1
- Electronic Component
- BM0000280991
- Operating Temperature
- 40℃~+150℃
- Operating Voltage
- 9V~20V
- Load Type
- IGBT；MOSFET
- Current(IOH)
- 200mA
- Current(IOL)
- 420mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IR21271STRPBF
1. 产品简介
IR21271STRPBF是一款高性能的高压侧或低压侧栅极驱动器，专为控制IGBT和N沟道MOSFET而设计，适用于需要高电压驱动的应用。作为Infineon（英飞凌）公司的一款集成电路（IC），它采用了表面贴装型SOIC-8封装，具有优良的电气性能和广泛的应用场景。
2. 主要特点
- 安装类型: 表面贴装型（SMD），适合自动化组装，节省空间。
- 逻辑电压支持: 输入逻辑电压（VIL, VIH）分别为0.8V和3V，确保与各种控制信号兼容。
- 驱动配置: 提供高压侧或低压侧的驱动选项，能够灵活适应不同电路的设计需求。
- 输入类型: 非反相输入，简化了电路设计。
- 通道类型及驱动器数: 单路输出设计，仅需一个驱动器，降低系统复杂性。
3. 输出性能
IR21271STRPBF在性能上具备卓越的输出能力：
- 电流输出: 峰值输出电流可达250mA（灌入）和500mA（拉出），适合驱动大功率负载。
- 上升/下降时间: 典型的上升时间为80ns，下降时间为40ns，能够实现快速开关，提升系统响应速度和效率。
4. 电气特性
- 供电电压: IC可以在9V到20V的范围内稳定工作，这个电压范围使其能够适应多种电源配置。
- 高压侧电压支持: 可承受最大600V的自举电压，使其在高压应用中表现出色。
5. 环境适应性
IR21271STRPBF的设计温度范围为-40°C至150°C，适合在恶劣环境条件下工作，特别适合工业控制、电动汽车及可再生能源系统等领域。
6. 应用领域
IR21271STRPBF能够广泛应用于：
- 电力转换: 在逆变器和马达驱动等领域，控制IGBT及MOSFET的开关状态。
- 电动汽车: 用于驱动电机控制系统，满足高效率与高可靠性的需求。
- 工业自动化: 提供稳定可靠的驱动信号，确保自动化设备的高效运行。
- 可再生能源: 在太阳能和风能发电系统中，进行有效的功率转换与控制。
7. 总结
IR21271STRPBF的各项性能指标使其成为一种理想的栅极驱动器，适用于高压和高功率应用。它的表面贴装型设计、宽工作温度范围及高速开关能力，结合Infineon作为知名品牌的技术优势，确保了其在市场上的竞争力。工程师可以自信地选用IR21271STRPBF，以实现高效、可靠的电源管理和控制，在满足严苛应用需求的同时，推动整体系统性能的提升。
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