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Infineon BFP760H6327XTSA1
Configuration
1 options
Configuration
23+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon BFP760H6327XTSA1
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BFP760H6327XTSA1
- Electronic Component
- 16.5dB ~ 29dB
- Electronic Component
- 1
- Package
- SOT-343-4
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0g
- Electronic Component
- 1
- Electronic Component
- BM0000530921
- Type
- Surface Mount
- Operating Temperature
- 150°C（TJ）
- Transistor Type
- NPN
- Frequency
- 45GHz
- Power
- 240mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BFP760H6327XTSA1 产品概述
概述
BFP760H6327XTSA1是一款高性能的NPN型双极晶体管（BJT），由著名的半导体制造商Infineon（英飞凌）生产，专为高频和低噪声应用设计。该产品广泛应用于无线通信、信号放大、射频（RF）和微波设备等领域，能够在提供优异增益和低噪声的同时，保持稳定的工作性能。
关键参数
- 电流 - 集电极（Ic）: 最大70mA
- 工作温度: 可承受高达150°C的环境温度，适合苛刻工作条件。
- 频率 - 跃迁: 支持高达45GHz的频率，满足高频信号处理的需求。
- 噪声系数: 在900MHz到5.5GHz范围内，典型噪声系数为0.5dB至0.95dB，这使得该设备在高频应用中非常适合低噪声放大。
- 增益: 提供16.5dB至29dB的增益，确保信号的有效放大。
- 功率 - 最大值: 提供最高240mW的功率输出，适合大多数信号放大需求。
- 集射极击穿电压（Vce）: 最大值为4V，有效保护设备免受过电压影响。
- DC电流增益 (hFE): 在Ic为35mA和Vce为3V的条件下，最小值为160，确保在不同工作条件下具备良好的增益特性。
封装与安装
BFP760H6327XTSA1采用SOT-343表面贴装型封装，具有较小的尺寸和良好的热管理特性，适合于现代电子电路的紧凑设计需求。这种封装类型方便在自动贴片机上进行高速生产，提升了生产效率和可靠性。
应用场景
BFP760H6327XTSA1非常适合以下应用：
- 无线通信设备: 在移动电话、无线LAN、蓝牙设备等中用作射频放大器，保障信号的发送与接收清晰度。
- 信号处理: 可用于数据传输设备中的信号调理，与其他信号处理元件配合使用。
- 卫星通信: 由于其高增益和低噪声特性，该晶体管在卫星信号的接收和放大中效果显著。
- 医疗设备: 在一些医疗成像设备及监测设备中，BFP760H6327XTSA1可以提高信号的质量和稳定性。
总结
作为Infineon的一款优秀产品，BFP760H6327XTSA1由于其出色的性能特点，成为高频低噪声应用中的理想选择。无论是在设计新设备还是升级现有系统时，选择这款三极管都能够有效提升产品的整体性能与可靠性，其广泛的应用前景和高性价比，使其在电子领域中得到了越来越多的关注与应用。通过结合其高增益、低噪声和高耐温特性，BFP760H6327XTSA1成为许多工业和消费电子产品的首选器件。
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