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Infineon IRF7313TRPBF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Infineon IRF7313TRPBF
- Type
- INFINEON
- Unit
- Electronic Component
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IRF7313TRPBF
- Electronic Component
- 1
- Package
- SO-8
- Electronic Component
- 2 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.275g
- Electronic Component
- 1
- Electronic Component
- BM0000287926
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：IRF7313TRPBF
简介
IRF7313TRPBF 是一款高性能的双N沟道场效应管（MOSFET），广泛应用于各种电子电路中，尤其适合开关电源管理和低压高效率电机驱动等应用。该器件由英飞凌（Infineon）公司制造，具有优异的电气性能和可靠的耐用性，适合在各种苛刻条件下工作，能够满足现代电子设计的多元化需求。
产品特性
电气性能
- 漏源电压（Vdss）：该MOSFET具有最高30V的漏源电压，适合用于低压电路，确保在正常工作条件下的安全性。
- 连续漏极电流（Id）：在25°C的环境下，IRF7313TRPBF能够提供高达6.5A的持续电流，适应高功率应用场景。
- 导通电阻（Rds(on)）：在5.8A的电流和10V的栅极电压下，漏源的导通电阻低至29毫欧。这一低导通电阻意味着在开关工作中损耗显著减少，从而提高了整体能效。
- 栅源极阈值电压（Vgs(th)）：最低1V的栅源极阈值电压使得IRF7313TRPBF在低电压驱动时仍然能够可靠工作，提高了设计灵活性。
高效能的开关特性
- 栅极电荷（Qg）：在10V的栅极电压下，最大栅极电荷为33nC，体现出良好的开关响应时间。低栅极电荷使得设备能够在高频率下进行切换，适合高频开关电源等应用。
- 输入电容（Ciss）：最大输入电容为650pF，确保在高频操作时的良好兼容性与稳定性，减少信号失真。
温度范围与散热性能
- 工作温度：该器件的工作温度范围为-55°C到150°C，能够在不同的环境条件下可靠工作，适合严酷的工业和汽车环境。
- 最大功率耗散：最大功率损耗为2W，适合于在不产生过多热量的情况下进行高效工作。
封装与安装
- 封装类型：IRF7313TRPBF采用了8-SOIC封装，尺寸小巧（0.154"或3.90mm宽），确保在对空间要求高的电路设计中也能轻松集成。
- 安装方式：表面贴装型（SMD）封装让它在自动化生产中容易被焊接，同时也方便了电路板的布局与设计。
应用领域
IRF7313TRPBF广泛应用于：
- 开关电源和电源管理电路
- 电动机驱动和控制系统
- LED驱动电路
- 逆变器和太阳能应用
- 汽车电子设备
- 便携式电子设备
总结
总而言之，IRF7313TRPBF 以其优越的电气特性和强大的应用灵活性，成为现代电子设计中不可或缺的元器件。其低导通电阻、优良的开关性能和广泛的工作温度范围，使其在各类应用中表现出色。无论是在消费类电子产品，还是在工业控制和汽车电子领域，IRF7313TRPBF 都展现了高效和可靠的特性，是设计工程师的理想选择。
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