WMSIC Electronic Components

Infineon IDH20G120C5XKSA1

ModelIDH20G120C5XKSA1
PackageTO-220-2
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Infineon IDH20G120C5XKSA1
Type
INFINEON
Minimum package
500 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
IDH20G120C5XKSA1
Electronic Component
1
Package
TO-220-2
Electronic Component
Diode
Electronic Component
> 500m A(Io)
Electronic Component
1g
Electronic Component
1
Electronic Component
BM0228667354
Type
Electronic Component
Package / Housing
TO-220-2
Diode Type
Electronic Component
Operating Temperature
55°C ~ 175°C
Electronic Component
Electronic Component
Electronic Component
500

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IDH20G120C5XKSA1 — Infineon CoolSiC™ 1200 V 碳化硅肖特基二极管 产品概述

一、产品简介

IDH20G120C5XKSA1 为英飞凌第五代 CoolSiC™ 碳化硅肖特基二极管,额定反向电压 1200 V,直流平均整流电流 56 A(DC),在 TO-220-2 实体两引脚(PG-TO220-2-1)通孔封装中实现高功率密度。采用薄晶圆工艺与新的合并 PN 结结构,提升浪涌电流承受能力并兼顾成本与系统可靠性。

二、关键电气参数

  • 最大反向电压(Vr):1200 V
  • 平均整流电流(Io):56 A(DC)
  • 正向压降(Vf):约 1.8 V @ 20 A
  • 反向恢复时间(trr):≈ 0 ns(几乎无反向恢复)
  • 反向泄漏电流:123 µA @ 1200 V
  • 电容:1050 pF @ 1 V, 1 MHz
  • 结温工作范围:-55 °C 至 175 °C

三、主要特性与优势

  • 低正向压降和高温稳定性:SiC 材料在高压与高温条件下维持低导通损耗,有利于降低整流器和开关电源的损耗。
  • 几乎无反向恢复:trr ≈ 0 降低开关损耗与电磁干扰(EMI),适合高速切换应用。
  • 改进浪涌能力:薄晶圆与合并 PN 结结构提升瞬态电流承受,增强系统可靠性。
  • 通孔 TO-220 封装:便于散热处理与维修,更适合需外加散热器的中大功率应用。

四、典型应用场景

  • 中高压开关电源(SMPS)、有源整流 / PFC
  • 逆变器与变频器(工业、电机驱动)
  • 太阳能逆变/能量转换系统
  • 充电桩与电源模块
  • 电信与数据中心电源前端

五、实际使用建议

  • 散热:TO-220 需要良好散热路径,建议采用适配散热器并注意导热界面材料与紧固扭矩。
  • 布局:保持功率回路低电感环路,尽量缩短芯片至电容与器件之间的走线,降低电压尖峰。
  • 保护:尽管浪涌能力有所提升,仍建议通过合适的慢熔断器、热保护与浪涌抑制器对系统进行保护。
  • 高频特性:器件电容(~1050 pF)在高频开关设计中会影响开关损耗与 EMI,需在电路设计时评估并搭配合适的滤波/缓冲策略。
  • 安装:通孔安装时注意绝缘要求与接地布局,如需绝缘垫片请使用合适的绝缘垫与螺丝。

六、选型要点

选择 IDH20G120C5XKSA1 时应结合系统电压裕量、连续/峰值电流、开关频率与散热条件。若需进一步降低导通损耗或适配更高频率,可与其他 CoolSiC 器件比较 Vf、漏电与电容参数,平衡效率、成本与系统复杂度。

如需器件数据手册、热阻模型或参考电路,可联系供应渠道获取英飞凌官方资料以进行详细热设计与电路仿真。

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