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JSMSEMI JSM4953
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI JSM4953
- Type
- JSMSEMI
- Minimum package
- 3000
Technical parameters
- Electronic Component
- JSMSEMI
- Electronic Component
- JSM4953
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 2 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.195g
- Electronic Component
- 1
- Electronic Component
- BM0258706479
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2W
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 528pF
- Gate (Qg)
- 6nC@15V
- Resistor(RDS(on))
- 89mΩ@4.5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
JSM4953 产品概述
一、产品简介
JSM4953 是 JSMSEMI（杰盛微）推出的一款双路 P 沟道场效应管（MOSFET），封装为 SOP-8，集成两颗 P 沟道晶体管，适合中低压高侧开关与电源管理应用。器件在室温下具有低导通电阻与中等开关速度的特性，在便携设备、电源路径切换及保护电路中具备良好性价比。
二、主要参数
- 通道数：2 个 P 沟道
- 漏–源电压 (Vdss)：30 V
- 连续漏极电流 (Id)：5.3 A
- 导通电阻 RDS(on)：89 mΩ @ Vgs = 4.5 V, Id = 4.2 A
- 功耗 (Pd)：2 W
- 阈值电压 Vgs(th)：3 V
- 总栅极电荷 Qg：6 nC @ Vgs = 15 V
- 输入电容 Ciss：528 pF；反向传输电容 Crss：70 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOP-8（双通道封装）
三、关键特性
- 低压差导通：在 Vgs ≈ -4.5 V 时 RDS(on) 仅 89 mΩ，适合低压高侧开关场景。
- 开关损耗-功率平衡：Qg = 6 nC 与 Ciss/Crss 指标表明器件为中等开关速度，兼顾效率与 EMI。
- 宽工作温度范围，适应工业级温度变化。
- 双通道 SOP-8 便于版面集成与两路独立或并联应用。
四、典型应用
- 电池供电设备的高侧开关与电源路径控制（如便携终端、移动电源）。
- 负载断开/倒车防护电路与热插拔开关。
- 逆变器/DC-DC 前级保护与旁路开关（需按功耗评估）。
- 电机驱动或继电器驱动的低压控制回路（中小功率）。
五、设计与使用建议
- 为获得标称 RDS(on)，在高侧应用需对栅极施加相对源极合适的负偏压（参考数据手册的 Vgs 要求）。
- 导通损耗示例：在 4.2 A 下 4.2^2×0.089 ≈ 1.57 W 的导通功耗，接近器件 Pd = 2 W，实际应用应考虑 PCB 散热和并联或降低平均电流。
- 推荐在栅极串联合理阻值以抑制振铃并限制浪涌电流，必要时加 TVS 或钳位电路防止瞬态过压。
- 布局时在器件引脚下方增加铜面和热沉区域，必要时使用多孔过孔导热到内层或背面铜箔以提升散热能力。
六、封装与热管理
SOP-8 小型封装便于自动贴装，但热阻相对较高。对于连续大电流或高频切换场合，建议加大 PCB 铜箔面积、使用散热层和多个过孔以降低结壳温升，确保器件在额定温度范围内稳定工作。
七、可靠性与采购
JSM4953 适合追求成本与集成度的中低压电源设计。具体的最大 Vgs、脉冲能力和封装热阻等详细参数，请以官方数据手册为准；批量采购与技术支持可联系 JSMSEMI（杰盛微）授权渠道。
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