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JSMSEMI DRV8870DDAR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI DRV8870DDAR
- Type
- JSMSEMI
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- JSMSEMI
- Electronic Component
- DRV8870DDAR
- Electronic Component
- 1
- Package
- ESOP-8
- Electronic Component
- Brushed DC Motor Driver IC
- Electronic Component
- 0.329g
- Electronic Component
- 1
- Integrated FET
- Electronic Component
- Features
- Current Sampling
- Electronic Component
- BM0257700091
- Resistor
- 600mΩ
- Current
- 3.5A
- Operating Temperature
- 40℃~+125℃
- Operating Voltage
- 8V~38V
- Static Current(Iq)
- 10uA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DRV8870DDAR 产品概述
DRV8870DDAR 为 JSMSEMI（杰盛微）推出的一款单通道高侧/低侧集成功率FET驱动器，面向汽车级及工业级直流电机、执行器与电磁负载驱动场景。器件集成功率MOSFET，简化了外部器件设计并提升可靠性，适用于8V~38V的工作电源范围，兼顾宽电压适应性与热性能设计。
一、主要规格亮点
- 集成FET：器件内部包含高/低侧功率MOSFET，简化系统设计与焊接。
- 峰值电流：3.5A，满足短时冲击和启动电流需求。
- 工作电压：8V~38V，适配常见车载与工业电源。
- 导通电阻(Rds(on))：600mΩ（典型），用于估算导通损耗与热升。
- 静态电流(Iq)：10µA，静态功耗低，利于低待机能耗应用。
- 工作温度：-40℃ ~ +125℃，覆盖工业与车规常见温度范围。
- 封装：ESOP-8，便于自动化贴片与散热设计。
二、应用场景
- 小型有刷直流电机驱动（齿轮箱、风扇、泵等）。
- 电磁阀、继电器线圈、致动器控制。
- 工业控制系统、楼宇自动化及车载辅助设备。
- 需要宽工作电压、低静态功耗与抗冲击能力的场合。
三、设计与热管理建议
- 由于Rds(on)为600mΩ，连续工作时会产生显著功耗（P = I^2·R），需根据最大工作电流计算总体损耗并做好散热。推荐在PCB上使用大面积铜箔和热通孔连接底部散热层。
- 封装ESOP-8应尽量在焊盘下方设计热沉焊盘或连接到散热地层，以降低结壳温差并提升可靠电流能力。
- 对于高频启停或频繁反向过冲的负载，建议在电源侧添加合适的去耦电容与反向抑制元件，保护器件免受瞬态电压冲击。
四、使用注意事项
- 在峰值电流附近长时间工作将导致过热或损坏，应留有安全裕度并考虑降额使用。
- 线路布局应最小化驱动回路的环路面积，靠近器件放置去耦电容，避免电磁干扰。
- 工作环境若存在高温、高湿或腐蚀性介质，应按相关可靠性规范进行封装和保护处理。
五、总结
DRV8870DDAR 以集成FET、宽电压范围与低静态电流为主要优势，适合要求体积小、结构简单且需承受短时大电流的直流负载驱动应用。合理的PCB热设计与电源滤波可显著提升其长期稳定性与使用寿命。若需并联或提升持续输出能力，建议结合系统热仿真与实际负载测试调整设计方案。
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