WMSIC Electronic Components

JSMSEMI 2N7002K

Model2N7002K
PackageSOT-23
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI 2N7002K
Type
JSMSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
2N7002K
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.1g
Electronic Component
1
Electronic Component
BM0257629852
Operating Temperature
65℃~+150℃
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2N7002K 产品概述

一、概述与主要参数

2N7002K(JSMSEMI 杰盛微)是一款 SOT-23 封装的 N 沟道小信号场效应管,适用于低功耗开关与信号级应用。关键参数包括:漏源耐压 Vdss = 60V;连续漏极电流 Id = 300mA;导通电阻 RDS(on) = 7.5Ω(Vgs=10V,Id=0.5A);耗散功率 Pd = 350mW;阈值电压 Vgs(th) = 2.4V。栅极电荷 Qg ≈ 3nC(Vgs=10V),输入电容 Ciss = 33pF、输出电容 Coss = 14pF、反向传输电容 Crss = 9pF。工作温度范围为 −65℃ 到 +150℃。

二、器件特性与电气意义

该器件定位为小信号 MOSFET:60V 的耐压使其在中等电压场景(例如 12V/24V 系统)中作为开关或保护元件可行;但7.5Ω 的导通电阻较大,导通损耗在较高电流下显著。阈值电压约 2.4V,表明在逻辑电平下部分导通,但要获得较低 RDS(on) 需更高 Vgs(例如接近 10V 时)。较小的 Ciss/Crss 和 Qg 意味着在驱动能力有限的场合能够实现较快切换,适合频率不高的开关应用。

三、典型应用场景

  • 低速数字开关、负载开关(小电流 LED 驱动、传感器供电切换)
  • 电平转换与接口缓冲(3.3V 与更高电压间)
  • 反向保护、极性保护与软启动电路(利用较高 Vdss)
  • 模拟开关/开路检测(需注意导通电阻对信号的影响)

四、设计与使用注意事项

  1. 功耗与发热:按 P = I^2·RDS(on) 估算,若 Id = 300mA,P ≈ 0.3^2×7.5Ω = 0.675W,已远超 Pd = 0.35W,因此不能在无散热的 SOT-23 环境下长期承载 300mA;应限制平均电流、采用短脉冲或加强 PCB 散热。
  2. 栅极驱动:为降低开关损耗和 RDS(on),尽量提高 Vgs(若系统允许接近 10V);驱动源应能提供 Qg≈3nC 的瞬时电流,建议在门极串联 100Ω 左右限流并并联下拉电阻防止悬浮。
  3. 感性负载保护:开关感性负载时需外加续流二极管或 RC/Snubber,以防击穿或能量回灌。
  4. 布局建议:门极走线短且靠近驱动器,源端尽量与地平面良好连接以降低温升;对开关节点做去耦与吸收元件。
  5. 极性与引脚:SOT-23 常见引脚为 G、D、S(请参照厂方数据手册确认具体封装引脚定义)。

五、选型建议

若应用要求持续大电流或低 RDS(on),建议选用低阻高流版本 MOSFET;若用于小电流、信号开关或电平转换,2N7002K 在 60V 耐压及小电容特性下是成本效益较高的选择。购买与设计前请以 JSMSEMI 的完整数据手册为准,核对温度系数、极限参数和封装尺寸,以保证可靠性。

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