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LRC LSI1012LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC LSI1012LT1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- LSI1012LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0226539022
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
LSI1012LT1G 产品概述
一、概要介绍
LSI1012LT1G 是乐山无线电（LRC）推出的一款单个 N 沟道增强型场效应管（MOSFET），采用 SOT-23 小封装，面向低压、小功率开关与功率管理应用。器件耐压20V，连续漏极电流可达500mA，工作温度范围宽（-55℃ 到 +150℃），适合便携设备和工业电子的通断与保护场合。
二、主要电气参数
- 漏源耐压（Vdss）：20V
- 连续漏极电流（Id）：500mA
- 导通电阻（RDS(on)）：1.25Ω @ Vgs=1.8V、Id=350mA
- 阈值电压（Vgs(th)）：0.9V @ Ig=250µA
- 栅极电荷量（Qg）：750pC（测量点 4.5V 与 10V）
- 功耗（Pd）：225mW
- 类型：N 沟道，单个器件，封装 SOT-23
三、封装与热特性
LSI1012LT1G 采用常见的 SOT-23 表面贴装封装，利于密集 PCB 布局。由于封装体积小，器件的功耗耗散能力受限（Pd=225mW），在高功率或持续大电流工况下需通过 PCB 铜箔散热、增加焊盘面积或并联器件来降低结温，确保长期可靠性。额定工作温度跨度大，适应性强，但仍需避免结温超过制造商的最大允许值。
四、典型应用场景
- 低压电源的开关控制与负载切换（例如电池管理、便携设备电源路径控制）
- 小电流驱动与保护电路（反向保护、低功耗复位电路）
- 作为逻辑电平可驱动的开关元件，在 1.8V 至 5V 逻辑系统中使用（注意开关损耗和热管理）
- 低频脉冲或静态通断场合，适用于对开关速度要求不高的设计
五、使用建议与注意事项
- 器件为低压低功耗型，RDS(on) 较大且 Qg 相对较高，若用于开关转换频率较高的场合，会产生较大开关损耗与驱动能耗，需评估驱动能力与热预算。
- 推荐在靠近器件的 PCB 区域铺设较大铜箔以增强散热，必要时搭配热孔或散热片设计。
- 典型导通规格在 Vgs=1.8V 时给出，适合 1.8V/3.3V 逻辑直接驱动，但在更高电流场合应使用更低 RDS(on) 的功率 MOSFET。
- 在实际设计中，应按照最大结温与功耗限值计算允许的平均与脉冲电流，避免长期在极限条件下工作以延长器件寿命。
本产品适合追求小体积、低电压开关解决方案的设计者，选型时请结合实际电流、开关频率与热管理方案进行综合评估。若需更详细的电气特性曲线和封装图纸，请参考厂商完整数据手册或联系供应渠道获取样片与技术支持。
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