WMSIC Electronic Components

LRC LMUN5213T1G

ModelLMUN5213T1G
PackageSC-70
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC LMUN5213T1G
Type
LRC
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LRC
Electronic Component
LMUN5213T1G
Electronic Component
1
Package
SC-70
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.028g
Electronic Component
1
Electronic Component
BM0228586588
Operating Temperature
55℃~+150℃
Resistor
1
Resistor
47kΩ
Transistor Type
NPN
Power Dissipation(Pd)
202mW
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LMUN5213T1G 产品概述

一、产品概况

LMUN5213T1G 是 LRC(乐山无线电)推出的一款预偏置数字 NPN 晶体管,封装为 SC-70,适合用于逻辑侧直接驱动小电流负载和作为开关缓冲器。该器件设计用于简单、可靠的低功耗开关场景,减少外部元件数量,便于快速原型与空间受限的设计。

二、主要特性

  • 晶体管类型:NPN(预偏置,数字晶体管)
  • 集射极击穿电压 Vceo:50 V
  • 最大集电极电流 Ic:100 mA
  • 直流电流增益 hFE:约 80(条件:Ic=10 mA,Vce=10 V)
  • 输入电阻(内部预置):47 kΩ
  • 电阻比率:1(厂家标注)
  • 功耗耗散 Pd:202 mW(封装/环境相关)
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SC-70(小型表面贴装)
  • 单件数量:1

三、典型性能与使用建议

  • 由于内部有 47 kΩ 的输入电阻,LMUN5213T1G 可以直接由逻辑电平(如 3.3 V / 5 V)驱动而无需外部基极限流电阻。以 5 V 输入为例,基极电流约为 (5−0.7)/47k ≈ 0.09 mA,按 hFE≈80,对应工作电流可达 ≈7 mA(线性区估算)。
  • 若希望在饱和区工作以实现低 VCE(sat),需要更大的基极电流;但预偏置电阻值较大,内置驱动能力有限,适合驱动数 mA 级负载(如 LED、小电流继电器驱动前级、逻辑级开关等),不建议直接驱动高电流负载或功率器件。
  • 功耗限制:器件最大耗散约 202 mW。工作时需保证 VCE×Ic ≤ Pd,在中高电压或高电流条件下注意热量管理。举例:若 Ic=20 mA,则允许的 VCE 平均值约为 10 V(理论上),实际应留裕量并考虑脉冲与散热条件。

四、典型应用场景

  • 微控制器 IO 口的电平缓冲和反向驱动
  • 低电流 LED 驱动(配合限流电阻)
  • 开关小信号继电器或光耦前端驱动
  • 信号接口保护与简单的逻辑转换
  • 空间受限的便携式电子设备与传感器节点

五、封装与管脚说明

  • 封装形式:SC-70,适用于自动化贴装与小型化 PCB 设计。
  • 精确管脚排列(基极/集电极/发射极)建议参照 LRC 官方数据手册或样片测试确认,以免接反影响性能和可靠性。

六、选型与注意事项

  • 若应用需要持续几十毫安以上的驱动电流或较高的功率耗散,请选用大功率封装或外加驱动器。
  • 对于需要保证饱和导通(低 VCEsat)的场合,注意预偏置电阻限制基极电流,可能需要外加更小的基极电阻或使用驱动级。
  • 在高温、高电压或长时间工作状态下,应评估热工况并预留安全裕量,避免功耗超过 Pd。
  • 建议在设计前查阅厂家完整数据手册,确认极限参数、典型特性曲线和焊接/回流工艺要求。

如需我为您的具体电路(例如由 3.3 V MCU 驱动某型号 LED 或继电器)计算实际可驱动电流与安全余量,我可根据工作电压与占空比给出更精确的建议。

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