WMSIC Electronic Components

LRC LBSS4350SY3T1G

ModelLBSS4350SY3T1G
PackageSOT-89
BrandLRC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LRC LBSS4350SY3T1G
Type
LRC
Minimum package
5000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LRC
Electronic Component
LBSS4350SY3T1G
Electronic Component
1
Package
SOT-89
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.122g
Electronic Component
1
Electronic Component
BM0228535957
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
148MHz
Power Dissipation(Pd)
550mW
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LBSS4350SY3T1G 产品概述

一、产品简介

LBSS4350SY3T1G 是乐山无线电(LRC)推出的一款小功率、高电流的 NPN 双极型晶体管。该器件在 SOT-89 封装下提供最高集电极电流 3A、集-射极击穿电压 50V,适用于一般开关、驱动和放大场景,兼顾开关速度与放大性能。

二、主要参数(摘要)

  • 晶体管类型:NPN
  • 最大集电极电流 Ic:3A
  • 集-射极击穿电压 Vceo:50V
  • 最大耗散功率 Pd:550mW(SOT-89)
  • 直流电流增益 hFE:200(测量条件:Ic=100mA,Vce≈2V)
  • 特征频率 fT:148MHz
  • 集电极截止电流 Icbo:1µA(典型)
  • 集-射极饱和电压 VCE(sat):≈500mV(给定条件:2A / 100mA,详见数据表)
  • 基-射击穿电压 Vebo:6V
  • 工作温度范围:-55℃ ~ +150℃
  • 封装:SOT-89
  • 包装及数量:常见小包装,示例数量 1 个(按需求订购)

三、特性亮点

  • 高电流能力:在小型封装下可承受高达 3A 的集电极电流,适合中小电流开关与驱动应用。
  • 良好增益:hFE≈200(在 100mA 条件下),便于作为开关前级或线性放大器使用,降低基极驱动电流需求。
  • 高频特性:fT=148MHz,支持较宽带宽的放大应用或用作驱动级时保证较快边沿响应。
  • 小型封装:SOT-89 提供较好的 PCB 布局便利性,适合空间受限的消费与工业设备。

四、典型应用场景

  • 低压直流开关、负载驱动(继电器、继电器驱动、低至中等功率电机)
  • 线性放大与前置放大器(音频前级、信号放大)
  • 电源管理与稳压器驱动(作为误差放大器或开关元件)
  • 通信设备中的中频放大或缓冲驱动(受限于功率和封装散热)

五、封装与引脚提示

SOT-89 小型塑封,便于表面贴装。常见引脚排列通常为 1=Base、2=Collector(大引脚 / 散热片)、3=Emitter,但不同厂商封装标注可能略有差异,使用前请以厂商原始数据表和封装图为准。由于 Pd 仅为 550mW,建议在 PCB 设计中使用大面积铜箔或散热过孔提高散热能力。

六、热管理与使用建议

  • 注意功耗与结温:SOT-89 的最大耗散功率有限,长时间高电流工作时需考虑结温上升并做功率降额。
  • PCB 散热:在集电极散热面周围布置足够铜箔,必要时通过多层板、过孔导出热量。
  • 饱和导通与驱动:在开关应用中,为求低 VCE(sat) 应适当提高基极电流,但基极不应超过器件最大值;具体 IB 取值参考数据表。
  • 防止基-射击穿:Vebo=6V,基极对发射极间电压需控制在安全范围内,避免反向击穿。

七、选型与替代

当需要兼顾空间、成本与适中电流时,LBSS4350SY3T1G 是一个平衡选择。若需更高功耗或更低饱和压,应考虑更大封装或功率等级的替代器件;若主要追求高频性能,可选更高 fT 的射频晶体管。

八、小结

LBSS4350SY3T1G 以 SOT-89 封装在有限空间内提供 3A 的集电极能力、50V 的耐压和较高的直流增益,适合多种通用开关与放大场景。设计中应特别关注热管理与基极驱动,以确保长期可靠性。欲获得更详细的限值、典型特性曲线和封装尺寸,请参考厂家完整数据手册。

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