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LRC S-LN2308ELT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC S-LN2308ELT1G
- Type
- LRC
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- S-LN2308ELT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0230634265
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 900mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 312pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S-LN2308ELT1G 产品概述
一、主要参数
S-LN2308ELT1G 是乐山无线电（LRC）推出的一款 SOT-23 封装 N 沟增强型 MOSFET，适用于中低功率开关和保护场合。主要电气参数如下：
- 漏源电压 Vdss：60 V
- 连续漏极电流 Id：2.6 A
- 导通电阻 RDS(on)：100 mΩ @ Vgs=10 V, Id=2 A
- 最大耗散功率 Pd：900 mW（环境及 PCB 条件相关）
- 阈值电压 Vgs(th)：2.5 V
- 栅极电荷 Qg：3.3 nC @ Vgs=30 V
- 输入电容 Ciss：312 pF @ Vds=30 V
- 反向传输电容 Crss：16 pF @ Vds=30 V
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：SOT-23
二、特性与优点
- 60 V 的耐压等级使其可用于较高总线电压的开关应用。
- 100 mΩ 的导通电阻（在 10 V 驱动下）在小功率负载时具有较低的导通损耗。
- Qg=3.3 nC 和 Ciss=312 pF 表明栅极电容适中，驱动能耗和开关速度在小型驱动器或 MCU 驱动器配合下容易兼顾。
- SOT-23 封装占板面积小，适合空间受限的应用与表贴组装。
三、典型应用
- 小功率 DC-DC 变换器、降压/升压开关管
- 负载开关、反接保护与电源选择电路
- 小型电机驱动、继电器驱动与灯驱动（注意浪涌电流限制）
- 电池管理与便携设备电源路径控制
四、封装与热管理
SOT-23 封装的热阻较大，Pd=900 mW 为理想散热条件下的值。实际应用中需注意：
- 增大 PCB 铜箔面积并连接散热层以降低结温；长时间高电流工作需额外降额。
- 在高环境温度下按厂商热特性曲线对功率和电流进行降额使用。
五、使用建议与注意事项
- 虽然 Vgs(th)=2.5 V，但该值只是导通起始电压；若以低压逻辑（如 3.3 V）驱动，应验证在此驱动下 RDS(on) 是否满足系统损耗要求。
- 对于感性负载，建议在开关回路添加合适的续流路径或外部二极管，并考虑 Crss 导致的米勒效应以避免误触发或开关振铃。
- 建议在栅极串联小阻（10–100 Ω）以抑制振荡并限制瞬态电流，必要时并联 TVS 或 RC 吸收器以抑制电压尖峰。
- 设计时确保持续电流和脉冲电流均在安全范围内，并在高温工况下按热降额计算。
六、选型与替代建议
本器件适合中低功率、60 V 级别的开关场合。若需更低 RDS(on) 或更高电流能力，应选用更大封装或专用功率 MOSFET；若需逻辑电平驱动（在 4.5 V 以下仍低 RDS(on)），应优先选择标注“逻辑栅”特性的型号。选型时同时比较 RDS(on) 在不同 Vgs 下的曲线、热阻以及开关损耗指标，以满足系统效率与可靠性要求。
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