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LRC S-LMBT5401LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- LRC S-LMBT5401LT1G
- Type
- LRC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LRC
- Electronic Component
- S-LMBT5401LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0230025801
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S-LMBT5401LT1G PNP型双极晶体管产品概述
一、产品基本定位
S-LMBT5401LT1G是乐山无线电（LRC）推出的普通PNP型双极结型晶体管（BJT），采用SOT-23贴片封装，专为小型化、低功率电子设备中的信号放大与开关控制场景设计。其兼具高频特性、宽温度适应性与低损耗特点，是消费电子、工业控制等领域的常用基础器件。
二、核心电参数解析
该晶体管的关键参数明确了性能边界与适用场景，核心参数可分为三类：
（一）直流特性参数
- 集电极电流（Ic）：最大连续集电极电流500mA，满足小功率电路的电流驱动需求；
- 集射极击穿电压（Vceo）：基极开路时耐压150V，可应对中等电压场景（如电源辅助电路）；
- 耗散功率（Pd）：最大允许耗散300mW，适配低功耗设备（避免大功率场景）；
- 直流电流增益（hFE）：Vce=5V、Ic=10mA（典型小信号工况）下增益稳定240，确保信号放大线性度；
- 集电极截止电流（Icbo）：仅50nA（典型值），漏电流极小，降低静态功耗；
- 集射极饱和电压（VCE(sat)）：Ic=50mA、Ib=5mA（开关工况）下仅500mV，导通损耗低、开关响应快。
（二）高频特性
特征频率（fT）达300MHz，支持中等频率范围的信号处理（如音频、射频辅助电路），避免高频增益衰减过快。
（三）温度与电压稳定性
- 工作温度：-55℃~+150℃，覆盖工业级要求，可在极端环境下稳定工作；
- 射基极击穿电压（Vebo）：5V，防止射基极过压损坏，提升电路防护性。
三、封装与可靠性设计
采用SOT-23贴片封装，具备三大优势：
- 小型化：体积紧凑（约2.9×1.6×1.1mm），适配智能手机、可穿戴设备等小型模块；
- 自动化生产：支持SMT贴装，适合大规模批量制造；
- 可靠性保障：LRC成熟封装工艺结合宽温设计，产品寿命长、故障率低。
四、典型应用场景
基于性能特点，该器件广泛用于：
- 小型信号放大：音频前置放大器、传感器信号调理（如温度/压力传感器）；
- 低功率开关：小型家电电源开关、遥控器按键扫描电路；
- 电源辅助电路：线性稳压反馈回路、过流保护检测管；
- 消费电子模块：智能手机辅助控制、蓝牙耳机信号处理；
- 工业控制：PLC输入/输出接口、小型电机驱动辅助电路。
五、品牌与质量保障
乐山无线电（LRC）是国内半导体老牌厂商，产品符合RoHS、REACH等国际标准，S-LMBT5401LT1G经过温度循环、湿度老化等严格测试，一致性好，是替代进口同类型器件的高性价比选择。
该器件以均衡的性能覆盖了小功率电子设备的核心需求，是电路设计中常用的基础晶体管之一。
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