WMSIC Electronic Components

LITEON LTV-5341C-TP1

ModelLTV-5341C-TP1
PackageSOP-5-300mil
BrandLITEON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
LITEON LTV-5341C-TP1
Type
LITEON
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
LITEON
Electronic Component
LTV-5341C-TP1
Electronic Component
1
Package
SOP-5-300mil
Electronic Component
Gate Driver Optocoupler
Electronic Component
0.253g
Electronic Component
1
CMTI(kV/us)
30kV/us
Features
Output
Electronic Component
BM0262576568
Operating Temperature
40℃~+110℃
Load Type
MOSFET;IGBT
(tr)
10ns
(tf)
10ns
(Vf)
1.6V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LTV-5341C-TP1 产品概述

一、产品简介

LTV-5341C-TP1 是 LITEON(台湾光宝)推出的一款高性能光耦合器,专为功率半导体门极驱动而设计。器件内部由一颗 AlGaAs 发光二极管与带功率输出级的 IC 光耦合,能够在-40°C 至 +110°C 的温度范围内稳定工作,特别适合电机逆变器与电源逆变器中的 IGBT 与 MOSFET 驱动场合。

二、主要规格

  • 隔离电压 (Vrms):6 kV
  • 共模瞬态抗扰度 (CMTI):30 kV/µs
  • 峰值输出电流:3 A
  • 传播延迟 tpHL / tpLH:150 ns / 150 ns
  • 输出上升/下降时间 tr / tf:10 ns / 10 ns
  • 驱动电源(VCC):15 V ~ 30 V
  • LED 正向压降 Vf:1.6 V(典型)
  • 封装:SOP-5 300 mil
  • 耗散功率 Pd:450 mW
  • 工作温度:-40°C ~ +110°C
  • 功能特性:轨到轨输出、带滞后的欠压锁定(UVLO)

三、关键功能与优势

  • 高隔离耐压与高 CMTI:6 kV 隔离电压配合 30 kV/µs 的共模抗扰度,能有效抵御逆变器中高 dv/dt 干扰,保证控制侧与功率侧安全隔离和信号完整性。
  • 强驱动能力:3 A 峰值输出电流配合轨到轨输出,可直接驱动多数功率 MOSFET/IGBT 的栅极,缩短开关时间,降低驱动开关损耗。
  • UVLO 带滞后:内置带滞后的欠压锁定,防止在驱动电源不稳定时产生不可靠的门极输出,提升系统可靠性。
  • 宽工作温度与封装便利性:-40°C 至 +110°C 的额定范围适合工业级应用,SOP-5 300 mil 封装便于自动化组装与散热设计。

四、典型应用

  • 逆变器/变频器的 IGBT 与 MOSFET 栅极驱动
  • 电机驱动控制器(整车/工业电机)
  • 开关电源与不间断电源(UPS)的功率级隔离驱动
  • 半桥/全桥拓扑中的高低侧驱动(与适当的浮空供电结合)

五、设计与使用建议

  • 输出侧电源(VCC)应采用稳定的 15–30 V 驱动电源,并在靠近器件处并联低 ESR 去耦电容(例如 0.1 µF + 1 µF)以抑制瞬态压降,配合良好的 PCB 回流层以降低寄生电感。
  • 在高 dv/dt 环境下,合理布线与接地隔离,尽量缩短 LED 至驱动端及栅极回路的回路面积,必要时添加 RC 阻尼或工频电阻以控制开关振铃。
  • 注意器件热耗散 Pd = 450 mW,预留适当的散热面积与热路径,避免长期在功率极限下工作。
  • 使用时参考器件延迟与上/下降时间(150 ns 延迟、10 ns 较快边沿)配合功率器件和栅极电阻的选型,兼顾开关损耗与电磁干扰。

LTV-5341C-TP1 在高共模干扰与高电压隔离要求的功率驱动场合表现优异,是实现可靠、快速且安全的栅极驱动解决方案。

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