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Leiditech WS03DLC-B
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Leiditech WS03DLC-B
- Type
- LEIDITECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- LEIDITECH
- Electronic Component
- WS03DLC-B
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.013g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 0.6pF
- Electronic Component
- BM0229921455
- Operating Temperature
- 55℃~+125℃
- Voltage
- 20V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 200nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WS03DLC-B 产品概述
一、产品简介
WS03DLC-B 是 Leiditech（雷卯电子）推出的一款单路双向瞬态抑制二极管（TVS），封装为 SOD-323，专为地面与信号线的瞬态过压与静电放电保护设计。器件以低电容、高浪涌吸收能力为特点，适合对信号完整性及抗扰度有较高要求的小体积电路板布局。
二、主要参数与特性
- 极性：双向（适合双向信号线或对称保护）
- 反向截止电压 Vrwm：3.3 V（适配 3.3 V 系统）
- 击穿电压（Vbr）：4 V（典型）
- 钳位电压：20 V（在 8/20 μs 峰值脉冲条件下）
- 峰值脉冲功率 Ppp：400 W（8/20 μs）
- 反向电流 Ir：200 nA（在 Vrwm 条件下，低泄漏有利于低功耗系统）
- 结电容 Cj：0.6 pF（极低电容，减小对高速信号的影响）
- 通道数：单路
- 工作温度：-55 ℃ ~ +125 ℃
- 防护等级：符合 IEC 61000-4-2（ESD）、IEC 61000-4-4（EFT）、IEC 61000-4-5（浪涌）
三、典型应用场景
- 3.3 V 数字接口与控制线（GPIO、I2C、SPI、UART 等）保护
- 高速数据链路/接口的输入端保护（因低 Cj 对信号完整性影响小）
- 消费电子、通信设备、工业控制的接口与外部连接器防护
- PCB 空间受限、需表面贴装的小型化设计
四、封装与布局建议
- 尽量将 WS03DLC-B 靠近受保护的连接器或信号源放置，减小走线感应电压
- 对高速信号线可并联小阻值或串联匹配电阻以改善阻抗与吸收能量
- SOD-323 为小型封装，适合回流焊工艺；贴装时注意焊盘设计与热量控制
五、可靠性与选型注意
- 400 W（8/20 μs）为脉冲峰值能力，非连续或长期承载能力；若有反复大能量冲击，应考虑更高能量等级或并联设计
- 钳位 20 V 为典型脉冲下测得值，实际系统中需根据系统容忍电压与器件的瞬态响应进行确认
- 低漏电（200 nA）适合电池供电或低功耗系统，但在高温下漏电会上升，选型时应考虑工作温度对漏电的影响
六、总结
WS03DLC-B 在小体积封装下提供了对 3.3 V 系统的双向瞬态保护方案，兼顾低结电容与较高脉冲吸收能力，适用于对信号完整性敏感且空间受限的应用场景。选型时应综合考虑钳位水平、脉冲能量要求与实际工作环境，以确保长期可靠保护。若需替代或并联配置建议，可根据系统最大容许电压和冲击能量提供进一步计算与方案。
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