WMSIC Electronic Components

ON MMBT4401LT1G

ModelMMBT4401LT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON MMBT4401LT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MMBT4401LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0093065370
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
250MHz
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:MMBT4401LT1G NPN 三极管

MMBT4401LT1G 是一款由安森美(ON Semiconductor)生产的高性能 NPN 晶体管,广泛应用于各种电子电路中。其紧凑的 SOT-23-3 表面贴装封装设计使其非常适合于空间受限的应用,如便携式电子设备、消费电子、通信设备和工业控制等。该器件结合了高电流增益、较低的饱和压降及优异的频率响应,成为设计工程师在多种电路环境下的理想选择。

主要规格

  1. 晶体管类型:NPN

    • MMBT4401LT1G 是一种 NPN 型模式的三极管,能够有效地处理电流和电压,常用于信号放大和开关应用。
  2. 集电极电流 (Ic):

    • 最大集电极电流为 600mA,确保在多种负荷条件下的稳定性和可靠性。这一特性使其适合在较高电流应用中工作,如电机驱动和大功率负载控制。
  3. 集射极击穿电压 (Vce):

    • 最大集射极击穿电压为 40V,为电路提供了出色的抗干扰能力,并可以在高电压电路中使用。
  4. 饱和压降 (Vce(sat)):

    • 在 50mA 和 500mA 时,饱和压降最大为 750mV 和 500mV。这意味着该元件在开关状态下能够提供较低的功耗和热量,有助于提高电路的整体效率。
  5. DC 电流增益 (hFE):

    • 最小直流电流增益为 100,测试条件为 150mA 和 1V。高增益特性使得该晶体管在小信号放大器中表现优异,提高了信号处理的能力。
  6. 功率:

    • 最大功率为 300mW,适合多种功率要求较低的应用场景,能够有效避免器件因过热而损坏。
  7. 频率响应:

    • 最大跃迁频率为 250MHz,适用于高频信号处理电路,满足现代高性能通信设备的需求。
  8. 工作温度:

    • 它的工作温度范围为 -55°C 至 150°C,这一能力支持在恶劣环境条件下的使用,适合广泛的工业应用。
  9. 封装类型:

    • MMBT4401LT1G 采用 SOT-23 封装,尺寸小巧,有助于设计小型化电路。

应用场景

MMBT4401LT1G 的多种高性能特点使其适用于众多应用场景。例如:

  • 开关电路:可用于控制负载的开闭,如继电器驱动、LED 灯控制等。
  • 线性放大器:在音频放大器、信号处理电路中起到放大的作用,保证信号质量。
  • 射频应用:该晶体管的高频特性使其成为射频放大器的理想选择,适合接收和发送无线信号。
  • 数据通信:在各种数据传输和交换设备中,可以用作信号提升器,提升信号的强度和质量。

结论

综上所述,MMBT4401LT1G 是一款功能强大、性能卓越的 NPN 三极管,能够支持广泛的电子应用。其小巧的封装、卓越的电流和电压特性,加上良好的热管理能力,使其成为工程师设计电路时的重要选择。无论是在消费电子、通信设备还是工业控制系统中,MMBT4401LT1G 都是一个值得信赖的元件。随着技术的发展和应用需求的不断变化,MMBT4401LT1G 将继续为提高电子设备的性能提供支持。

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