WMSIC Electronic Components

ON FDV301N

ON FDV301N
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Product image

ModelFDV301N
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

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Technical data

Product details

20 specifications

Core information

Product name
ON FDV301N
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
FDV301N
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM69417678
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FDV301N 产品概述

FDV301N 是一款高性能的N通道MOSFET（场效应晶体管），由安森美半导体（ON Semiconductor）制造。它采用SOT-23封装，适用于表面贴装技术（SMT），为现代电子系统提供了优秀的电源管理和开关功能。由于其优良的电气特性和小巧的封装，FDV301N 在消费电子、工业控制以及汽车电子等多个领域得到了广泛应用。

主要参数

  1. FET 类型：N 通道
  2. 技术：MOSFET（金属氧化物半导体场效应晶体管）
  3. 漏源电压（Vdss）：25V
  4. 连续漏极电流 (Id)：在25°C时具有220mA的电流承载能力，确保在各种工作条件下的稳定性与可靠性。
  5. 驱动电压：最小Rds(on)为2.7V，最大Rds(on)为4.5V，表明在较低驱动电压下也能够有效导通，有助于降低驱动功耗。
  6. 导通电阻 (Rds(on))：在最大电流400mA和Vgs为4.5V时，导通电阻最大值为4Ω。
  7. 阈值电压 (Vgs(th))：在不同Id时，其最大值为1.06V @ 250µA，表示开关的敏感性高，能够在较低的栅极电压下开始导通。
  8. 栅极电荷 (Qg)：在4.5V下，最大栅极电荷为0.7nC，说明在快速切换的应用中，其驱动功耗较低。
  9. 输入电容 (Ciss)：在10V下，最大输入电容为9.5pF，低输入电容有助于提高开关速度，降低切换损耗。
  10. 功率耗散：该MOSFET在25°C下的功率耗散最大为350mW，为系统提供了较高的效率。
  11. 工作温度范围：FDV301N 能够在-55°C 至 150°C 的宽广温度范围内工作，适合各种恶劣环境的应用。
  12. 安装类型：表面贴装型，使其适合现代小型化电路的设计需求。
  13. 封装类型：SOT-23，尺寸小巧且适合高密度组装。

应用场景

FDV301N由于其优异的电气特性，非常适合在多种应用场景中使用，包括但不限于：

  1. 电源管理：可以作为开关稳压器中的开关元件，优化电源效率，降低能量损耗。
  2. LED 驱动：在LED驱动电路中用作开关，能够实现对LED的通断控制，延长LED使用寿命并提高可靠性。
  3. 电池供电设备：适用于便携式电子产品，如智能手机、平板电脑等，减少功耗并提高整体效能。
  4. 汽车电子：在汽车电源系统中，作为负载开关或电机驱动器，提供高效的电流控制。
  5. 工业控制：用于传感器以及执行器驱动，实现高效的自动化控制。

结论

综上所述，FDV301N N通道MOSFET不仅具备出色的电气性能、低功耗和宽工作温度范围，还具有小巧的SOT-23封装，为各种电子设计提供了灵活的解决方案。凭借其高效率，高灵敏度以及广泛的应用前景，FDV301N 是现代电子设计师的理想选择。无论是在消费电子、工业控制，还是汽车电子领域，FDV301N均能帮助开发出更加高效、可靠和节能的产品。

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