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ON BAT54XV2T1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BAT54XV2T1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BAT54XV2T1G
- Electronic Component
- 1
- Package
- SOD-523
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.024g
- Electronic Component
- 1
- Electronic Component
- BM0035900724
- Current
- 200mA
- Diode
- 1
- Current(Ir)
- 2uA@25V
- (Vf)
- 800mV@100mA
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAT54XV2T1G 产品概述
BAT54XV2T1G 是一款高性能的肖特基二极管，由知名电子器件制造商安森美（ON Semiconductor）生产。凭借其卓越的电气特性和广泛的工作温度范围，这款器件被广泛应用于各种电子设备和系统中，如电源管理、信号整流、保护电路及高频应用等。
产品特性
肖特基二极管特性 BAT54XV2T1G采用了肖特基二极管的设计理念，相较于传统二极管，肖特基二极管具有更低的正向电压降和更快的切换速度。具体来说，该产品在100mA的条件下，其正向电压（Vf）仅为800mV，能够有效降低功耗并提升可靠性。
电流与反向电压 此器件的平均整流电流（Io）为200mA（DC），最大反向电压（Vr）可达到30V。这使得BAT54XV2T1G非常适合于需要较高整流效率和稳定性的电路应用，同时其反向电流（2µA @ 25V）在保证元件正常运作的情况下，进一步减少了电路的能量损耗。
开关速度与反向恢复时间 BAT54XV2T1G的小信号速度设计相应于≤200mA（Io），其反向恢复时间（trr）仅为5ns。这意味着该器件能够在高频应用中维持优异的性能表现，适合用于需要快速切换的电源设计。
电容特性 该器件的电容在不同的反向电压（Vr）和频率（F）下，其电容值为10pF（@1V，1MHz），这使得它在高频应用中能保持较低的寄生电容，有助于提升电路的整体性能。
温度范围 BAT54XV2T1G的工作结温范围为-55°C至125°C，使其在各种严苛环境中依然保持出色的性能。这种宽温度范围使得该器件成为高温和低温应用的理想选择，能够在汽车电子、工业控制及消费电子等领域中得到广泛应用。
封装与安装 该器件采用SOD-523封装，表面贴装类型设计对于现代电子产品的发展趋势极为适合。SOD-523封装不仅可以节省面积，还能够提高装配效率。同时，良好的散热性能使得其在高负荷工作下依然保持稳定性。
应用领域
BAT54XV2T1G广泛应用于以下领域：
- 电源管理：在开关电源、线性稳压器和其他电源变换器中，利用其低正向电压降和稳定的整流特性。
- 信号整流：适用于各种信号处理电路，特别是在高频信号传输中的整流应用。
- 电压保护：在电路中用作过压保护，防止器件在高电压情况下损坏。
- 无线通信：在无线接收器和发射器中，用于信号调理和整流。
结论
总体来说，BAT54XV2T1G是一款涵盖多种应用需求的优质肖特基二极管，具备低正向电压、快速切换速度和宽温度范围的优秀特性，非常适合于现代电子设备的设计需求。作为ON Semiconductor的产品，BAT54XV2T1G将为工程师和设计师提供可靠的解决方案，助力高效、高稳定性的电子系统开发。
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