WMSIC Electronic Components

ON BSS138LT1G

ModelBSS138LT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON BSS138LT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
BSS138LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0000286680
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
50V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSS138LT1G是安森美(ON Semiconductor)公司推出的一款高性能N通道MOSFET,广泛应用于电子电路中,尤其是在开关和放大器电路中,因其卓越的电气特性和较高的工作效率而受到设计工程师的青睐。以下是对BSS138LT1G的详细产品概述。

1. 基本参数

BSS138LT1G提供了一个强化型N通道MOSFET产品,具有以下基础参数:

  • FET 类型:N通道
  • 技术:MOSFET(金属氧化物半导体场效应管)
  • 漏源电压(Vdss):50V,表明该器件能够承受高达50V的电压,这使其适于高电压应用。
  • 连续漏极电流(Id):200mA @ 25°C,适合低功率的开关应用。
  • 驱动电压:在最大 Rds(on) 和最小 Rds(on) 下为5V。
  • 导通电阻(Rds(on)):在200mA和5V的条件下,最大值为3.5欧姆,帮助降低功耗。
  • Vgs(th)(最大值):在1mA下最大值为1.5V,方便控制开关性能。

2. 电气特性

BSS138LT1G的电气特性展现了其出色的工作效率和可靠性。最大化的Vgs为±20V,以及输入电容(Ciss)为50pF在25V时的表现,使得BSS138LT1G在开关过程中具有快速响应的能力。

在功率耗散方面,该器件最大功率耗散值为225mW,适合多种用途的中低功率电路。同时,设备的工作温度范围为-55°C到150°C,显示出其在极端环境下的稳定性和可靠性。

3. 封装设计

BSS138LT1G采用SOT-23-3(TO-236)封装,这种表面贴装型封装不仅压缩了元件的体积,提高了其集成度,同时也方便在电路板上进行自动化焊接和装配。SOT-23-3封装适用于高密度的PCB设计,且能够有效降低寄生电感与电容,从而提高系统的性能。

4. 应用场景

BSS138LT1G的多种特性使其适用于多样的应用场景,包括但不限于:

  • 开关应用:可用于低功率开关电路,尤其是在电源管理和电源开关的设计中。
  • 信号放大:在音频放大器和射频放大器中,BSS138LT1G能作为信号放大器来提升输出信号。
  • 负载驱动:适合小型负载驱动,如LED驱动、继电器驱动等。
  • 线性调节器:用于电压调节和电流调节电路中,在需要稳压的应用场合也能发挥其特长。

5. 结论

BSS138LT1G以其高性能的电气特性、广泛的应用范围和高可靠性的设计,成为了电子工程师在设计电路时的优选元件。其出色的漏源电压和导通电阻特性,使其能够在历经多种电气条件下依然保持良好的工作状态,非常适合在现代电子设备中发挥重要作用。

总之,BSS138LT1G不仅是一款性价比高的现代MOSFET,而且在环保和可靠性方面具备较大的优势,符合工业应用对电气元件日益严格的要求。通过选择BSS138LT1G,设计工程师能够有效提升其设计的性能与效率,为各种设备和应用提供稳定的支持。

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