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ON MMUN2211LT1G
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MMUN2211LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MMUN2211LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Digital Transistor
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0000034976
- Operating Temperature
- 55℃~+150℃
- Resistor
- 1
- Resistor
- 13kΩ
- Transistor Type
- NPN
- Power Dissipation(Pd)
- 400mW
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：MMUN2211LT1G 数字晶体管
基本信息
MMUN2211LT1G 是一种高性能的数字晶体管，属于 NPN 型预偏压晶体管，主要用于开关和放大电路中。该器件由知名半导体供应商 ON Semiconductor（安森美）推出，具有良好的电气性能和可靠性，适合多种电子应用场景。
结构与封装
该晶体管采用表面贴装型（SMD）封装，规格为 SOT-23-3（TO-236），具备三针引脚配置。这种封装形式的优点在于体积小、重量轻，适合现代电子设备对空间和重量的严格要求，因此广泛应用于便携式设备和高密度电路板。
基本参数
- 晶体管类型：NPN（负极型）晶体管
- 最大集电极电流 (Ic)：100 mA
- 集射极击穿电压 (Vce)：最大 50 V
- 基极电阻 (R1)：10 kΩ
- 发射极电阻 (R2)：10 kΩ
- 电流增益 (hFE)：在 5 mA 和 10 V 时，最小增益为 35
- 饱和压降 (Vce(sat))：在 300 µA 和 10 mA 时，最大饱和压降为 250 mV
- 集电极截止电流 (Ic(off))：最大 500 nA
- 最大功率：246 mW
性能特点
MMUN2211LT1G 的设计使其非常适合用于低功耗开关操作，该器件在饱和状态下表现出较低的压降，有利于提高系统效率。其最小 DC 电流增益 (hFE) 在低电流条件下仍可达到 35，使其在大多数应用中都能够提供足够的放大能力。
此外，该器件的集电极截止电流（500 nA）非常低，适合用于需要高阻抗状态的应用，如信号传输和信号处理电路。这种特性使得 MMUN2211LT1G 成为现代低功耗电子设备的理想选择，特别是在电流敏感的应用场合下。
应用场景
MMUN2211LT1G 被广泛应用于多种电路和设备，包括：
- 开关电路：可靠的开关性能使其适合用于电源管理和信号切换。
- 放大器：可用于音频放大器和射频放大器中，帮助增强信号强度。
- 数字电路：在数字电路中作为开关元件，控制逻辑电平。
- 便携式电子设备：其低功耗特性使其非常适合用于手机、平板电脑及其他便携式工具。
- 传感器接口：可以作为传感器信号的放大器，提升传感器输出的可信度。
结论
MMUN2211LT1G 数字晶体管凭借其出色的性能和广泛的应用潜力，成为许多电子设计工程师的首选组件。其小巧的体积、优异的电气特性、可靠的工作条件使其适应现代电子产品对高效能和高集成度的需求。在未来的发展中，MMUN2211LT1G 将继续发挥重要作用，推动电子技术的进步与创新。
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