WMSIC Electronic Components

ON MMBT5550LT1G

ON MMBT5550LT1G
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Product image

ModelMMBT5550LT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
ON MMBT5550LT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MMBT5550LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0000001489
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT5550LT1G 产品概述

一、产品简介

MMBT5550LT1G 是一款高性能的 NPN 型晶体管，由安森美半导体（ON Semiconductor）生产，采用 SOT-23-3（TO-236）表面贴装封装。这款晶体管具备广泛的应用范围，特别是在高电压和高电流环境下，适合用于开关和放大电路等多种电子设备中。

二、主要特性

  1. 晶体管类型: MMBT5550LT1G 采用 NPN 结构，适合于多种电子应用。
  2. 电流特性: 最大集电极电流（Ic）为600mA，能够满足绝大多数小型电动机和负载的驱动需求。
  3. 电压承受能力: 集射极击穿电压（Vceo）高达140V，使得该器件在高压环境下依旧能安全工作，适用于电力转换和电源管理等领域。
  4. 低饱和压降: 在5mA和50mA的条件下，Vce 饱和压降最大为250mV，这意味着在开关状态时能有效降低功耗，提高系统效率。
  5. 高增益特性: 在10mA的电流下，DC 电流增益（hFE）最小为60，提供良好的信号放大能力。
  6. 极低的截止电流: 集电极截止电流（Ico）仅为100nA，非常适合于低功耗应用。
  7. 宽工作温度范围: 工作温度范围从-55°C到150°C，使其能够在极端温度条件下稳定工作，适合各种工业和汽车电子应用。
  8. 封装与安装: 采用 SOT-23-3 封装，非常适合表面贴装，便于自动化生产线的焊接和集成。

三、应用领域

MMBT5550LT1G 的多项特性使其适用于以下应用：

  • 功率放大器: 适合用于音频放大器、射频放大器等，让信号能够被有效放大。
  • 开关电路: 在开关电源、继电器驱动及电机控制中可以作为开关使用，其较高的电流及电压能力确保了其可靠性。
  • 传感器电路: 作为信号调理组件，可以用于提高传感器信号的强度，改善系统的整体性能。
  • 汽车电子: 由于高温度耐受性和稳定性，非常适合汽车电子产品，如车载音响、驾驶信息系统等。
  • 工业控制: 用于大规模生产线自动化和工业设备的控制电路，满足高可靠性要求。

四、技术参数总结

  • 类型: NPN
  • 集电极电流 (Ic): 600mA（最大值）
  • 集射极击穿电压 (Vceo): 140V（最大值）
  • 饱和压降 (Vce-sat): 250mV @ 5mA、50mA
  • 截止电流 (Ico): 100nA（最大值）
  • DC 电流增益 (hFE): 60 @ 10mA
  • 功率损耗: 225mW（最大值）
  • 工作温度: -55°C ~ 150°C
  • 封装类型: SOT-23-3（TO-236）

五、结论

MMBT5550LT1G 凭借其高压、高电流特性以及优异的工作温度范围，成为电子设计工程师在选择 NPN 晶体管时的理想选择。其广泛的应用范围和高可靠性使其在当今的电子产品中扮演了重要角色。安森美作为知名半导体品牌，确保了该产品的质量及稳定性，是您可靠的电子元器件供应选择之一。

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