WMSIC Electronic Components

ON MMBFJ112

ON MMBFJ112
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Product image

ModelMMBFJ112
PackageSOT-23-3L
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
ON MMBFJ112
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MMBFJ112
Electronic Component
1
Package
SOT-23-3L
Electronic Component
1 N
Electronic Component
MOSFET(JFET)
Electronic Component
0.03g
FETType
N
Electronic Component
1
Electronic Component
BM0058432065
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBFJ112 产品概述

基本信息

MMBFJ112是一款高性能的N沟道结型场效应管（JFET），由知名品牌安森美（ON Semiconductor）生产。这款器件主要用于对小信号进行放大、开关和调节，适用于各种电子电路应用。其封装形式为SOT-23-3，便于在现代电子设备中实现高密度的布线和紧凑的设计。

主要参数

  1. FET类型: MMBFJ112为N通道JFET，这种类型的场效应管以其低噪声、低功耗以及良好的线性度而受到青睐。

  2. 电压特性:

    • 击穿电压（V(BR)GSS）: 最大为35V，提供了良好的电压保护能力，适合在需要较高电压操作的电路中使用。
    • 截止电压（VGS off）: 该器件在1µA的漏电流下，其截止电压为1V，说明其在关闭状态时表现出色的特性，有助于节能及降低电路噪声。

  3. 电流特性: 在Vds为15V时，漏极电流（Idss）为5mA，这一特性使得该器件在低功耗信号处理中具有良好的应用前景。

  4. 导通电阻: RDS(On)为50Ω，表明在导通状态下器件的电流通过阻抗较低。低导通电阻有助于提高电路效率，减小热量产生。

  5. 功率耗散: 最大功率为350mW，满足一般的小信号处理需求，同时也保证了器件在不同工作条件下的安全性。

  6. 工作温度范围: MMBFJ112的工作温度范围为-55°C至150°C（TJ），这种宽广的温度适应性使其适合在极端环境下使用，如汽车、航空航天及工业控制等领域。

封装与安装

MMBFJ112采用SOT-23-3封装，体积小巧，适合表面贴装（SMT）技术，这种封装不仅有助于节省空间，也提高了电路板的集成度。表面贴装的特性使得该器件在自动化生产线上的安装更加便捷，提高了生产效率。

应用场景

MMBFJ112广泛应用于各种需要高增益的射频（RF）放大器、小信号开关、混频器、信号调制等场合。由于其低功耗、高稳定性特点，该器件非常适合用于便携式电子设备、消费电子、传感器等高功率及高温度敏感的应用。同时，使用该器件可以降低电路的功耗，延长电池寿命，提高信号处理精度。

结论

总之，MMBFJ112是一款功能强大、性能稳定的N沟道结型场效应管。凭借其高击穿电压、低导通电阻和宽温度范围等特点，它在诸多电子应用中展现出卓越的性能表现。无论是在高频信号处理、低功耗电路设计，还是在要求严格的工作环境中，MMBFJ112都能满足设计师对电子元件的严格要求。对于追求性能与效率的工程师而言，选择MMBFJ112将是一个理想的决策。

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