WMSIC Electronic Components

ON NTA4153NT1G

ModelNTA4153NT1G
PackageSC-75(SOT-523)
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON NTA4153NT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
NTA4153NT1G
Electronic Component
1
Package
SC-75(SOT-523)
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0200035704
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.3mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NTA4153NT1G 产品概述

1. 产品背景

NTA4153NT1G是一款由ON Semiconductor(安森美半导体)制造的高性能N沟道MOSFET(场效应管),属于MOSFET系列中的一员。作为一种广泛应用于多种电子设备中的关键半导体元器件,它常被用于开关、放大和信号处理等多种场合。

2. 主要规格

  • 制造商: ON Semiconductor
  • 封装类型: SC-75(SOT-416)
  • 零件状态: 有源
  • FET类型: N通道
  • 技术: MOSFET(金属氧化物场效应晶体管)

3. 电气特性

NTA4153NT1G的关键电气特性使其在多个应用场合展现出卓越的性能:

  • 漏极连续电流(Id): 在25°C的环境温度下最大可承受915mA。
  • 工作电压(Vdss): 最大漏源电压为20V,适合用于低压应用。
  • 导通电阻(Rds(on)): 在4.5V的栅极驱动电压下,600mA电流时的最大导通电阻为230毫欧。低导通电阻特性可确保在开关状态下能效最优化,减少功耗。
  • 阈值电压(Vgs(th)): 最大阈值电压为1.1V(@ 250µA),有助于实现快速切换和低功耗操作。
  • 功率耗散(Pmax): 最大功率耗散为300mW,适合用于对功耗有严格要求的电路设计。

4. 驱动和增益特性

  • 驱动电压: NTA4153NT1G的驱动电压有两个可选状态,分别是1.5V和4.5V。使用不同的驱动电压会影响其导通电阻和切换特性。
  • 栅极电荷(Qg): 最大栅极电荷为1.82nC(@ 4.5V),这表明在开关操作中需要的驱动能量相对较少,从而提升整体的工作效率。

5. 工作环境

NTA4153NT1G能够在极端温度范围内可靠运行,其工作温度范围为-55°C至150°C。这样的实用温度范围使得该器件适合用于军事、航空航天以及工业等要求苛刻的应用场景。

6. 封装及安装

产品采用SC-75, SOT-416封装,属于表面贴装型(SMD)设计。这种封装方式极大地方便了自动化生产,适合现代电子设备的小型化需求。

7. 应用领域

凭借其出色的电气特性和工作环境适应性,NTA4153NT1G被广泛应用于:

  • 开关电源
  • 低功耗电路
  • 电机驱动
  • RF应用与信号放大器
  • 负载开关
  • 照明应用

8. 总结

NTA4153NT1G作为ON Semiconductor推出的高性能N沟道MOSFET,凭借其优异的电气特性、宽广的工作温度范围和紧凑的封装形式,不仅满足了现代电子产品对性能和空间的双重需求,也为设计工程师的应用提供了灵活的选择。无论是在开关电源、低功耗电路还是其他高要求的环境下,NTA4153NT1G都展示出了良好的应用潜力。对于需要高效率、高可靠性的设备来说,NTA4153NT1G无疑是一个值得推荐的选择。

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