WMSIC Electronic Components

ON MMBD914LT3G

ModelMMBD914LT3G
PackageSOT-23-3(TO-236)
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON MMBD914LT3G
Type
ON
Unit
Electronic Component
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
MMBD914LT3G
Electronic Component
1
Package
SOT-23-3(TO-236)
Electronic Component
Switch Diode
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0264581441
Current
200mA
Diode
Electronic Component
Current(Ir)
5uA@75V
(Vf)
1V@10mA
Power Dissipation(Pd)
225mW
Electronic Component
55℃~+150℃@(Tj)

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBD914LT3G 高速开关二极管产品概述

MMBD914LT3G是安森美(ON Semiconductor)推出的独立式高速开关二极管,采用SOT-23-3(TO-236)表面贴装封装,针对小功率高频电路的快速切换、低损耗需求优化设计,广泛应用于消费电子、工业控制、射频信号处理等领域。

一、产品品牌与定位

安森美作为全球半导体行业的核心供应商,其分立器件产品线以高可靠性、宽温适应性和批量一致性著称。MMBD914LT3G定位于中小功率高速开关场景,区别于普通整流管的低速特性,主打“高速切换+中等电压耐受”的平衡,是替代传统低速二极管的优选方案。

二、核心电气参数解析

该二极管的关键参数直接决定其应用边界,具体如下:

  • 正向压降(Vf):1V@10mA,小电流下导通损耗低,适合信号级电路(如逻辑电平转换);
  • 直流反向耐压(Vr):100V,覆盖低压至中压电路的反向阻断需求(如12V/24V电源系统);
  • 平均整流电流(If):200mA,持续工作电流能力满足小功率整流、续流场景;
  • 反向恢复时间(Trr):4ns,核心高速指标——比普通硅整流管(如1N4007的Trr≥300ns)快近百倍,可有效减少高频切换时的信号失真与功耗;
  • 反向漏电流(Ir):5uA@75V,漏电流极小,反向阻断性能优异,适合对静态功耗敏感的电路(如电池供电设备);
  • 非重复浪涌电流(Ifsm):500mA,可承受瞬间过流冲击(如电源上电尖峰、负载突变),提升电路可靠性;
  • 工作结温范围:-55℃~+150℃,覆盖工业级、军工级温度要求,适应极端环境(如户外传感器、车载辅助电路)。

三、封装与物理特性

采用SOT-23-3表面贴装封装(又称TO-236),具有以下实用特点:

  • 尺寸紧凑:典型封装尺寸约1.6mm×1.0mm×0.8mm,适合高密度PCB布局(如便携设备、小型模块);
  • 3引脚独立式配置:单二极管封装,引脚定义清晰(阳极、阴极、空脚/接地),便于电路设计;
  • 贴装兼容性:符合自动化SMT生产要求,支持回流焊、波峰焊工艺,适合批量生产。

四、典型应用场景

结合参数特性,MMBD914LT3G的核心应用场景包括:

  1. 高速逻辑电路保护:如TTL/CMOS电路的信号钳位、过压保护,快速切换避免逻辑误触发;
  2. 小功率DC-DC续流:用于手机充电器、蓝牙耳机等便携设备的高频开关电源,4ns Trr减少续流损耗;
  3. 射频信号检波:低漏电流+高速特性,适合低功率射频信号(如FM、蓝牙)的整流检波;
  4. 工业控制信号隔离:宽温范围适应工业现场(-40℃~+85℃),用于传感器信号的反向保护;
  5. 消费电子接口防护:如USB Type-C、耳机接口的过压保护,小封装不占用额外空间。

五、性能优势与选型参考

与同类产品对比,MMBD914LT3G的差异化优势:

  • 比普通整流管(如1N4148)反向耐压更高(100V vs 75V),适合更高电压场景;
  • 比快速恢复管(如FR107)开关速度更快(4ns vs 50ns),适合高频应用;
  • 宽温范围与浪涌能力,可靠性优于部分消费级替代器件。

选型注意:若需求电流>200mA,需选择更大功率器件;若电压>100V,需升级至更高耐压型号(如MMBD915LT3G)。

六、可靠性与应用注意事项

  1. 散热设计:最大耗散功率225mW,需确保PCB焊盘散热良好(如增加铜箔面积),避免结温超过150℃;
  2. 反向电压限制:工作时反向电压不得超过100V,否则可能导致器件击穿;
  3. 存储条件:常温干燥存储,避免长期暴露于潮湿环境(安森美封装具备防潮能力,但需符合常规半导体存储要求)。

综上,MMBD914LT3G是一款性价比高、适配性强的高速开关二极管,适合对速度、电压、封装有综合要求的中小功率电路设计。

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