WMSIC Electronic Components

ON NSVBAS70LT1G

ModelNSVBAS70LT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON NSVBAS70LT1G
Type
ON
Unit
Electronic Component
Minimum package
3000

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
NSVBAS70LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
Schottky Diode
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0264553465
Current
70mA
Diode
1
Current(Ir)
10uA@70V
(Vf)
1V@15mA
Electronic Component
55℃~+150℃
Electronic Component
3000
Voltage Rating(Vr)
70V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NSVBAS70LT1G 产品概述

一、概述

NSVBAS70LT1G 是安森美(ON Semiconductor)系列的肖特基二极管,SOT-23 小封装,针对空间受限且需要低正向压降与高速恢复的电路设计。其在15mA工作点时正向压降约为1.0V,直流反向耐压可达70V,适合中低功率整流与高频开关应用。

二、主要参数

  • 正向压降 (Vf):1.0V @ 15mA
  • 直流反向耐压 (Vr):70V
  • 典型整流电流:70mA(连续)
  • 反向电流 (Ir):10µA @ 70V
  • 工作结温范围:-55℃ ~ +150℃
  • 非重复峰值浪涌电流 (Ifsm):所给值“100nA”疑为单位或数值错误,建议向供应商核实(此项常以A或mA为单位)

三、优势亮点

  • 低正向压降:在小电流工作状态下减少功耗与热量产生,有利于电池供电或敏感模拟电路。
  • 良好的高压耐受性:70V 的反向耐压使其可用于更高工作电压的电源保护与整流。
  • 小封装(SOT-23):体积小、重量轻,便于表面贴装和自动化生产,适合便携与通信设备。
  • 宽温区间:-55℃至+150℃的结温范围适合工业级及严苛环境应用。

四、典型应用

  • 开关电源的高速小信号整流与钳位
  • 反向保护与防反接电路
  • 电平移位与快速开关信号整形
  • 便携式设备、通信模块、电池管理与接口保护

五、封装与热管理

SOT-23 封装体积小,热阻相对较高,连续 70mA 工作时需注意PCB散热设计:

  • 在封装底部及引脚周围增加铜箔面积,改善热扩散。
  • 对于脉冲或浪涌条件,评估热应力与允许的占空比。
  • 遵循厂商推荐的回流焊温度曲线,避免超温损伤器件可靠性。

六、使用注意与建议

  • 核实 Ifsm 的正确值与单位,避免在实际浪涌条件下误用。
  • 反向电流随温度上升显著增加,若在高温环境或高反向电压下长时间工作,应进行热仿真并考虑预留裕量。
  • 布局时使器件引脚与相关回路短且直,以降低寄生电感,提高开关性能。
  • 如需更详细的电气特性曲线、封装尺寸及焊接工艺,请参考安森美官方数据手册或联系供应商技术支持。

如需我帮忙核对 Ifsm 正确值、查询数据手册或给出参考电路图,我可以继续提供支持。

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