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ON MBRM120LT3G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON MBRM120LT3G
- Type
- ON
- Minimum package
- 12000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MBRM120LT3G
- Electronic Component
- 1
- Package
- DO-216AA
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.05g
- Electronic Component
- 1
- Electronic Component
- BM0229305967
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 400uA@20V
- (Vf)
- 650mV@3A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 12000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MBRM120LT3G 产品概述
一、产品简介
MBRM120LT3G 是安森美（ON Semiconductor）推出的一款肖特基势垒整流二极管，属于 Powermite 表面贴装系列，封装标注为 DO-216AA。器件额定直流整流电流为 1A，直流反向耐压为 20V，适用于需要低正向压降与快速整流响应的电源与保护电路。
二、主要特性
- 工作结温范围：-55℃ ～ +125℃，适应宽温工作环境。
- 正向压降（Vf）：650mV @ 3A（说明其在较高瞬态电流下具有较低的压降，有助于降低功耗）。
- 非重复峰值浪涌电流（Ifsm）：50A，能承受短时冲击浪涌。
- 反向电流（Ir）：400µA @ 20V，处于小型肖特基器件的常见范围。
- 封装与安装：DO-216AA 表面贴装，适合自动贴装与回流焊工艺。
- 环保与合规：T3G 等后缀通常与卷盘包装及合规性信息相关，具体以厂商数据手册为准。
三、电气参数与性能要点
MBRM120LT3G 在额定工作条件下提供稳定的整流性能。1A 的连续整流电流配合 50A 的峰值浪涌能力，使其能够在瞬态负载或开关瞬间承受较高电流冲击。尽管标称 Vf 在 3A 条件下测得为 650mV，但在典型 1A 工作点上正向压降会更低，从而减少功率损耗和发热。反向漏电在靠近额定反向电压时达到数百微安级，设计时需考虑在高温或高压下的漏泄增加。
四、典型应用
- 电源整流与续流（二极管回路、开关电源续流二极管）
- 逆向保护（防止误接或反接损坏敏感电路）
- 电源分配与降压模块输入保护
- 电池与便携设备的二次整流和隔离
- 其它对低正向压降和快速响应有要求的小功率电源电路
五、设计与使用建议
- 热管理：尽管为表面贴装器件，长期连续 1A 工作时应考虑 PCB 散热（加大铜箔面积或使用过孔导热）。
- 搭配滤波：在开关电源或高频场景，建议与适当的输入滤波电容配合以抑制尖峰电流。
- 焊接工艺：遵循厂商推荐的回流温度曲线进行焊接，避免过高的热应力。
- 布局：将二极管尽量靠近受保护器件或电源入口布置，以减少寄生电感带来的电压尖峰。
- 可靠性验证：若用于汽车或功能安全类应用，需查阅厂商的资格认证与可靠性数据并进行系统级验证。
六、结语
MBRM120LT3G 以其低正向压降、良好的浪涌承受能力和宽温特性，适合用于多种小功率电源与保护场景。具体参数、封装细节与订购信息建议参考安森美官方数据手册和封装资料，以获得完整的应用与可靠性指导。
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