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ON BZX84C18LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BZX84C18LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BZX84C18LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Zener Diode
- Electronic Component
- 0.03g
- Electronic Component
- 1
- (Zzt)
- 45Ω
- Electronic Component
- BM0000281803
- Diode
- 1
- Current(Ir)
- [email protected]
- Power Dissipation(Pd)
- 250mW
- Electronic Component
- 16.8V~19.1V
- Electronic Component
- 65℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BZX84C18LT1G
一、产品简介
BZX84C18LT1G是一款高性能稳压二极管，采用表面贴装型（SMD）设计，专为电压稳压和电路保护等应用而优化。其标称齐纳电压为18V，具有卓越的温度稳定性和低反向泄漏电流特点，这使得该器件非常适合在严格的环境和高可靠性要求的电子设备中使用。
二、基本参数
- 齐纳电压（Vz）：18V，适合中等电压的稳压应用。
- 逆向电流（Ir）：反向泄漏电流在12.6V时仅为50nA，表明其在工作状态下具有极高的稳定性和低泄漏特性。
- 正向电压（Vf）：在10mA正向电流下，正向电压为900mV，这对于大多数电源电路设计是良好的匹配。
- 最大功率：225mW，确保在高负载条件下的可靠性。
- 阻抗（Zzt）：高达45Ω，为电路提供良好的电流稳定性。
- 工作温度范围：-65°C至150°C，适应严酷的工作环境和温度波动。
三、封装及应用
- 封装类型：BZX84C18LT1G采用SOT-23-3（TO-236）封装，这种封装方式使其在电路板上的占空间更小，适合现代紧凑型电子设备设计。
- 应用场景：广泛应用于电源管理、信号调节、过压保护及其他需要稳压的电路中。具体包括但不限于：
- 电源稳压电路
- 数字电路中的电压参照
- 通信设备中的过压保护
- 消费电子产品的电气保护
四、品牌与质量
BZX84C18LT1G由安森美半导体（ON Semiconductor）生产，该公司在全球范围内享有盛誉，以提供高质量、高性能的半导体产品而闻名。其产品经过严格的质量控制和测试，确保能够满足各种严苛应用的要求。
五、产品优势
- 高稳定性：在极端温度下，BZX84C18LT1G仍能保持出色的性能，适合航空航天、汽车电子及工业控制等领域。
- 低泄漏：低反向泄漏电流特性减少了电路的能耗，提升了整体能效。
- 紧凑封装：小尺寸的封装使其易于在高密度电路设计中使用，不会占用过多的电路板空间。
- 多重保护：提供高过压保护能力，有效保护下游电子元件免受损害。
六、总结
BZX84C18LT1G稳压二极管是一款性能优越的电子元器件，具有18V的标称齐纳电压、超低反向泄漏以及广泛的工作温度范围。无论是在消费电子、工业控制，还是在高要求的航天和汽车电子领域，BZX84C18LT1G都能提供可靠的电压稳压和保护解决方案。其优越的性能和安森美半导体的品牌背书，使其成为电子设计工程师的优秀选择。在电路设计中，合理运用BZX84C18LT1G，可以有效提升系统的稳定性和安全性，从而保证设备的长期可靠运行。
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