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ON MM3Z13VT1G
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON MM3Z13VT1G
- Type
- ON
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MM3Z13VT1G
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzk)
- 80Ω
- (Zzt)
- 30Ω
- Electronic Component
- BM0222749691
- Diode
- 1
- Current(Ir)
- 100nA
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- 12.4V~14.1V
- Electronic Component
- 65℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：MM3Z13VT1G 稳压二极管
一、基本信息
MM3Z13VT1G是一款由安森美半导体（ON Semiconductor）生产的稳压二极管，主要用途是提供稳定的电压输出和过电压保护。标称齐纳电压为13V，适用于多种电子电路中调节电压及保护元件。该器件采用表面贴装型（SMD）封装，具有SOD-323封装形式，便于在现代电子设备中减少空间占用，提高集成度。
二、技术参数
电压特性：
- 齐纳电压(Vz)： 13V，工作范围从12.4V到14.1V，具有良好的电压稳定性，适合用于各种应用。
- 电流特性：反向泄漏电流在8V时为100nA，表明在非导通状态下器件的低泄漏特性，适合于高敏感度应用。
- 正向电压（Vf）：在10mA的电流下，正向电压为900mV，表明器件在工作时具有合理的正向压降。
功率和阻抗：
- 最大功率：300mW，可以在一定的功耗范围内工作，适合于低功耗电路。
- 最大阻抗(Zzt)：30Ω，确保器件具有较低的动态阻抗，从而在负载变化时能够快速响应。
工作环境：
- 工作温度范围：-65°C至150°C，适合在各种严苛环境下应用，提供广泛的兼容性。
- 封装类型：SOD-323，具有良好的热性能和电气特性。
三、应用场景
MM3Z13VT1G稳压二极管广泛应用于以下领域：
- 电源管理： 用于稳压电路中，帮助提供稳定的电压输出，并抑制电压波动，提高系统的安全性和可靠性。
- 过压保护： 保护敏感元器件免受瞬时过电压的冲击，确保系统的稳定性，特别是在汽车电子、消费电子等领域。
- 信号整形： 在信号处理电路中使用，确保信号电平的稳定，提高数据传输的可靠性和精度。
四、竞争优势
- 高可靠性： 安森美作为知名半导体制造商，其产品在市场上享有良好声誉，技术实力和产品质量值得信赖。
- 小型化设计： SOD-323封装设计，使其在空间受限的应用中具有明显优势，满足现代电子设备对小型化和轻量化的需求。
- 优异的电气性能： 低泄漏电流和高稳定性使得MM3Z13VT1G在多种环境条件下依然能够保持卓越的电气性能。
五、结论
MM3Z13VT1G稳压二极管是一款性能优异、适用性广泛的电子元件，凭借其13V的稳压特性和优良的电气参数，在众多应用场景中表现出色。无论是在电源管理、过压保护还是信号整形等方面，该器件都能为设计工程师提供可靠的解决方案。其小型化设计和高温度范围使其成为高要求电子产品中的理想选择。使用MM3Z13VT1G，能有效地提升电子系统的性能与稳定性，促进现代电子科技的不断进步。
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