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ON BAS40-04LT1G BAS40
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BAS40-04LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BAS40-04LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0000286631
- Current
- 120mA
- Diode
- 1
- Current(Ir)
- 1uA@25V
- (Vf)
- 1V@40mA
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAS40-04LT1G 产品概述
产品简介
BAS40-04LT1G 是一款高性能肖特基二极管，专为低电压和快速开关应用设计。它采取表面贴装型封装（SOT-23-3），被广泛应用于各种电子设备中，如电源管理、信号整流和反向极性保护等。其优异的反向电压和电流处理能力使其在电子行业中得到广泛的青睐。
关键参数
- 二极管类型: 肖特基二极管（Schottky Diode）
- 电流 - 平均整流 (Io): 120mA（DC，每个二极管）
- 不同 If 时的电压 - 正向 (Vf): 1V @ 40mA
- 电压 - DC 反向 (Vr): 40V（最大值）
- 反向泄漏电流: 1µA @ 25V
- 工作温度范围: -55°C ~ 150°C
- 封装类型: SOT-23-3（TO-236）
结构与技术
BAS40-04LT1G 采用先进的半导体技术制造，确保了其二极管配置为1对串联，适合高可靠性的电路设计。肖特基二极管的低正向电压降特性，使得该器件在工作时可以有效降低功耗，同时降低里程发热。它的反向电压能力可达到40V，适合多种输入电压系统，尤其在电源转换与信号调理电路中尤为重要。
该器件以小信号开关特性著称，能够在高达200mA的条件下保持稳定性能，适合各类快速开关应用。结合其极低的反向泄漏电流，BAS40-04LT1G 被广泛应用于高效率电源线路中，减少了待机功耗并提高了整体系统效能。
应用场景
BAS40-04LT1G 可广泛用于：
- 电源管理: 在AC/DC转换器、DC/DC转化器等电源管理电路中，可作为整流和反向保护元件。
- 电子设备保护: 利用其良好的反向电流特性，可用于防止电路中的反向电压对其他元器件造成的损害。
- 信号整流: 在信号处理电路中，应用该二极管进行信号整流，以减少波形失真和提高信号完整性。
- 消费电子产品: 在消费电子中，包括手机、便携式设备及其他电池供电的设备中，提供可靠的整流和保护功能。
性能优势
- 低正向电压降: 相较于传统硅二极管，BAS40-04LT1G能有效降低系统能耗，特别是在高频应用中的劣化。
- 宽工作温度范围: 可靠性高，能够在苛刻环境下稳定工作，适用于军工、航空航天和工业自动化等领域。
- 小型化封装: SOT-23-3封装增大了设计的灵活性，使得其在空间有限的应用中表现出色。
总结
BAS40-04LT1G 以其优异的性能和广泛的应用领域，成为现代电子设计中的重要选择。无论是在电源管理、信号处理，还是电路保护中，都能为设计师提供强有力的支持，确保系统在各种条件下的高效、稳定运行。选择 BAS40-04LT1G，意味着您为项目的成功奠定了坚实的基础。
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