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ON SZMMBZ33VALT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON SZMMBZ33VALT1G
- Type
- ON
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- SZMMBZ33VALT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.029g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Electronic Component
- BM0230873474
- Operating Temperature
- 55℃~+150℃
- Voltage
- 46V
- Electronic Component
- IEC 61000-4-2
- Current(Ir)
- 50nA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SZMMBZ33VALT1G 产品概述
一、产品简介
SZMMBZ33VALT1G 是 ON Semiconductor（安森美）推出的一款单向 TVS 稳压二极管，采用 SOT-23 小尺寸封装，内含双路保护结构，专为瞬态过压、静电放电（ESD）和脉冲浪涌保护设计。其稳态耐压和钳位性能适用于 24V 级电源与信号线保护，适合工业、通信、汽车电子与消费类设备中需要高可靠性浪涌防护的场合。
二、主要参数
- 极性：单向
- 反向截止电压（Vrwm）：26 V
- 击穿电压（Vbr，typ）：31.35 V
- 钳位电压（Vc）：46 V（Ipp 条件下）
- 峰值脉冲电流（Ipp）：870 mA @ 1.0 ms
- 峰值脉冲功率（Ppp）：40 W @ 1.0 ms
- 反向电流（Ir）：50 nA（常温测量）
- 通道数：双路
- 工作温度：-55 ℃ ~ +150 ℃
- 防护等级：符合 IEC 61000-4-2（ESD）标准
- 封装：SOT-23
- 类型/型号：TVS 稳压二极管，型号 SZMMBZ33VALT1G，品牌 ON (安森美)
三、核心优势
- 高脉冲吸收能力：在 1 ms 脉冲下可承受高达 40 W 的瞬态能量，适合应对短时浪涌事件。
- 低漏电流：反向漏电仅 50 nA，适合对静态功耗敏感的电路。
- 小封装、双路集成：SOT-23 尺寸可节省 PCB 面积，双路设计便于同时保护两条线或组合信号/电源保护，降低 BOM 成本。
- 宽温度范围与工业级可靠性：-55 ℃ 至 +150 ℃，可满足严苛环境工作需求。
- 符合 IEC 61000-4-2：对静电放电提供认证级别的保护，提升产品 EMC 性能。
四、典型应用场景
- 24V 工业电源轨与现场总线保护（PLC、传感器接口等）
- 通信设备与基站的供电与接口保护
- 汽车电子的车载辅助电源及数据线（需按车规级要求进一步确认）
- 消费类电子对信号线、数据线的 ESD 与浪涌防护
五、使用建议与注意事项
- 工作电压限制：确保被保护线路的正常工作电压不超过 Vrwm（26 V），避免长时间处于击穿区。
- PCB 布局：为保证最佳防护效果，器件应尽量靠近受保护端口放置，走线尽量短且粗，减少寄生电感与阻抗。
- 热管理与脉冲频率：Ppp 标注基于单次或低频脉冲，频繁的高能脉冲需进行去级或热设计以避免器件过热。
- 配合前级限流：在可能的大电流冲击场合，建议配合保险丝或限流元件以分担能量并保护器件。
- 验证与测试：在最终应用中进行系统级的 ESD/浪涌测试（符合 IEC 标准）以验证整体设计的稳健性。
总体而言，SZMMBZ33VALT1G 以其高能脉冲吸收能力、低漏电与小封装的双路设计，适合在空间受限且要求可靠瞬态防护的应用中作为首选 TVS 保护器件。若需具体原理图建议、封装引脚图或典型特性曲线，可参考 ON Semiconductor 的器件数据手册以获得详细电气参数与安装指南。
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