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ON MMSZ5258BT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON MMSZ5258BT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- MMSZ5258BT1G
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.034g
- Electronic Component
- 1
- (Zzk)
- 700Ω
- (Zzt)
- 70Ω
- Electronic Component
- BM0176122814
- Diode
- 1
- Current(Ir)
- 100nA@27V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 34.2V~37.8V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMSZ5258BT1G 产品概述
概述
MMSZ5258BT1G 是由安森美（ON Semiconductor）生产的一款稳压二极管，封装类型为 SOD-123。该器件主要用于电压稳压和过压保护，尤其适合在要求高精度电压参考和稳定性的应用中使用。这款稳压二极管具有标称齐纳电压为 36V，额定功率达到 500mW，且表现出优异的电流特性和工作稳定性。
基本参数
- 齐纳电压 (Vz): 36V（容差 ±5%）
- 最大功率: 500mW
- 阻抗 (Zzt): 最大值 70Ω
- 反向泄漏电流: 在 27V 时为 100nA
- 正向电压 (Vf): 在 10mA 时为 900mV
- 工作温度范围: -55°C ~ 150°C
- 安装类型: 表面贴装型
- 封装/外壳: SOD-123
特性
MMSZ5258BT1G 具备多项优越性能，是电子设计中的理想选择。这款稳压二极管的齐纳电压在 34.2V 至 37.8V 之间，具有良好的电压稳定性，能在各种应用条件下提供可靠的电压参考。它的最大功率评级达到 500mW，使其在广泛的电路中表现出色，能够在高负载情况下依然维持良好的性能。
反向泄漏电流仅为 100nA，表明该器件在高压工作下具有极低的漏电流。这一特性非常适合高精度电源系统，尤其是对于低功耗设备和传感器应用而言，可以有效降低功耗，提高系统效率。同时，采用 SOD-123 封装，实现了更小的放置空间，使得设计更具灵活性。
应用场景
MMSZ5258BT1G 稳压二极管适用于多种用途，包括但不限于：
- 电源管理: 在电源电路中可作为电压调节和过压保护器件，确保下游电路不受电压瞬变的影响。
- 传感器应用: 在传感器信号处理电路中，提供稳定的电压基准，提高测量精度。
- 车载电子: 在汽车电子系统中，具有严苛的环境要求，该器件的宽工作温度范围（-55°C ~ 150°C）使其适用于恶劣条件下的应用。
- 通信设备: 用于防止电压尖峰对信号处理元件的损害，保证通信系统的稳定运行。
结论
MMSZ5258BT1G 稳压二极管凭借其卓越的性能和广泛的应用场景，成为了电源管理和稳压电路的重要组成部分。安森美的这一产品不仅在电压稳定性和功率处理方面表现优异，同时其小巧的 SOD-123 封装也为现代电子产品的小型化发展提供了便利。进一步结合优异的温度适应性和极低的反向泄漏电流，MMSZ5258BT1G 无疑是在设计高效、低功耗电子系统中不可或缺的电子元件。通过选择 MMSZ5258BT1G，可以有效提升系统的可靠性与性能，是设计师在电路设计时的优选元件。
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