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ON SZBZX84C18LT1G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON SZBZX84C18LT1G
- Type
- ON
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- SZBZX84C18LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Zener Diode
- Electronic Component
- 0.03g
- Electronic Component
- 1
- (Zzt)
- 45Ω
- Electronic Component
- BM0227756857
- Diode
- 1
- Current(Ir)
- [email protected]
- Power Dissipation(Pd)
- 250mW
- Electronic Component
- 16.8V~19.1V
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SZBZX84C18LT1G 产品概述
一、概述
SZBZX84C18LT1G 是安森美（ON Semiconductor）出品的一款独立式稳压二极管，标称稳压值为 18V，适用于要求稳定中高压参考或过压保护的小功率电路。器件采用 SOT-23 封装，体积小、易于表面贴装，适合紧凑型电子设备和低功耗系统。
二、主要参数
- 稳压值（标称）：18V（规格范围 16.8V ~ 19.1V）
- 反向电流 Ir：50 nA @ 12.6V（典型漏电性能，利于低功耗应用）
- 阻抗 Zzt：45 Ω（表征小信号动态阻抗，对稳压精度有影响）
- 耗散功率 Pd：250 mW（SOT-23 封装的最大耗散能力）
- 工作结温范围：-65 ℃ ~ +150 ℃（适应宽温区工作环境）
- 封装：SOT-23（便于自动贴片与回流焊工艺）
三、性能与特性
该器件在低电流工作点表现出较小的反向漏电，适合电池供电或休眠态能耗敏感的系统。45 Ω 的动态阻抗意味着在稳压电流变化时会有一定的电压漂移，因此在需要高精度基准的场合应配合滤波或采用更高精度的基准源。250 mW 的功耗限制提示在大电流应用中需通过串联限流电阻或外部散热措施来控制结温，避免过热引起特性漂移或损坏。
四、典型应用场景
- 低功耗电源轨的局部稳压与基准（例如为模拟前端或控制电路提供 18V 参考）
- 过压保护与浪涌钳位（限制电路节点电压，保护后续器件）
- 電平移位与信号保护（在信号线上提供简单的电压钳位功能）
- 小功率模拟/混合电路中作为偏置源或基准源使用
五、封装与布局建议
SOT-23 封装有利于占板面积最小化，但热阻相对较大。建议：
- 在 PCB 设计时为二极管附近留出散热焊盘并连接到较大铜箔，以改善热传导。
- 对于连续工作电流不大的场合，可采用单层小焊盘；若可能产生较大瞬态功耗，应增大铜面积或靠近地平面散热。
- 在稳压器输入端配合串联电阻限制电流，输出端并联电容可抑制瞬态与噪声，提高稳压稳定性。
六、选型与注意事项
- 若系统对稳压精度要求更高或工作电流波动较大，可考虑阻抗更低、功率更高或采用集成基准芯片的替代品。
- 注意 250 mW 的耗散功率在高环境温度下需按功率热耗降额使用，计算实际结温并保持在额定范围内。
- 反向电流指标在高温下会上升，长期高温工作可能影响漏电与稳定性，应在电路层面预留裕量。
总体而言，SZBZX84C18LT1G 是一款适合中高电压、小功率、低漏电要求应用的 SOT-23 封装稳压二极管，在成本、体积与性能之间提供了均衡的选择。
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