WMSIC Electronic Components

ON FDV303N

ON FDV303N
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Product image

ModelFDV303N
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

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Technical data

Product details

20 specifications

Core information

Product name
ON FDV303N
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
FDV303N
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0000034968
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
350mW
Gate Voltage(Vgs)
±8V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FDV303N 产品概述

产品介绍

FDV303N 是安森美（ON Semiconductor）公司推出的一款高性能 N 脉道金属氧化物半导体场效应管（MOSFET），具有出色的电气特性与热性能，适用于各种电子电路设计。其主要应用领域包括开关电源、直流-直流转换器、驱动电路及其他需要高效开关控制的设备。

主要规格

FDV303N 的漏源电压（Vds.max）为 25V，使其适合用于中低压应用场景。该器件的最大连续漏极电流（Id）为 680mA（在 25°C 时），这意味着在设计电路时，可以充分利用该器件的导电能力，而不会超出其安全操作范围。此外，其导通电阻（Rds(on)）最大值为 450 毫欧 @ 500mA 和 4.5V，保证了在工作时低的功耗和较高的效率。

驱动电压与响应

FDV303N 需要的驱动电压范围为 2.7V 至 4.5V。这使得它可以在广泛的应用场合中，可以利用低电压逻辑电平直接驱动。在不同的栅极-source 电压（Vgs）下，漏源电压阈值（Vgs(th)）的最大值为 1.5V，这意味着在该电压下，器件已经能够有效工作，这保证了快速响应与可靠的开关性能。

电容特性

关于输入电容（Ciss），FDV303N 在 10V 的条件下，最大值为 50pF。较低的输入电容意味着该器件在高频应用中具有更好的性能，确保信号的快速传递而不会产生显著的延迟。此外，栅极电荷（Qg）的最大值为 2.3nC @ 4.5V，继续支持其在快速开关应用中的优势。

热性能与功耗

FDV303N 的功率耗散极限为 350mW（在 25°C 环境下）。随着工作环境温度的升高，功耗能力会有所下降，因此在实际应用中，合理的散热设计至关重要。其工作温度范围为 -55°C 至 150°C，这决定了其在高温恶劣环境下也能稳定工作。

封装和安装

FDV303N 采用 SOT-23 表面贴装型封装，这种封装方式不仅节省了 PCB 空间，还便于自动化焊接，同时也支持多种电子设备的集成与小型化设计。SOT-23 封装的特性使得在现代电子产品设计中十分流行。

应用领域

FDV303N 适用于广泛的应用领域，如：

  1. 开关电源：在开关电源中作为关键的开关元件，以提高效率并降低功耗。
  2. 直流-直流转换器：提供稳定的电力转换，适合便携式设备等应用。
  3. 驱动电路：例如在 LED 驱动中，能够有效地控制电流及其开关。
  4. 电机控制：通过快速开关控制，适合各种电机的驱动与控制。

结论

总体而言，FDV303N 是一款高效、可靠、应用广泛的 N 通道 MOSFET，非常适合应用于现代电子设备中的高效开关和信号处理。无论是在手持设备、工业控制还是消费电子产品中，FDV303N 都能凭借其出色的特性满足设计需求。通过合理的设计和布局，可以最大限度地发挥其性能，以提高整体电路的效率与可靠性。

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