WMSIC Electronic Components

ON RB751V40T1G

ModelRB751V40T1G
PackageSOD-323
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON RB751V40T1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
RB751V40T1G
Electronic Component
1
Package
SOD-323
Electronic Component
Schottky Diode
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0118564662
Current
30mA
Diode
1
Current(Ir)
500nA@30V
(Vf)
370mV@1mA
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

RB751V40T1G 产品概述

概述

RB751V40T1G 是由安森美(ON Semiconductor)推出的一款高性能肖特基二极管,采用SOD-323封装,专为表面贴装应用设计。该器件以其低正向电压降和出色的高频性能,广泛应用于各种电子设备,尤其是在需要低功耗和高效率的电路中,如电源管理、交流适配器、开关电源等领域。

关键规格

  1. 安装类型:SMD(表面贴装型)
  2. 封装:SOD-323
  3. 最大反向电压(Vr):30V
  4. 平均整流电流(Io):30mA(DC)
  5. 正向电压降(Vf):370mV @ 1mA
  6. 反向泄漏电流:500nA @ 30V
  7. 结温范围:-55°C 至 +150°C
  8. 电容值:2.5pF @ 1V, 1MHz

性能特点

  • 低正向电压(Vf):RB751V40T1G的正向电压降为370mV(在1mA条件下),这一特性使其在高效率电源转换中表现出色,能够显著减少功耗。
  • 小信号整流:在小信号应用中,该二极管能够处理高达200mA的瞬时电流,使其在快速切换应用中非常有效。
  • 低反向泄漏电流:在电压为30V时,其反向泄漏电流仅为500nA,这对于减小静态功耗和提升整体电路效率是非常关键的。
  • 宽工作温度范围:该器件的工作结温范围为-55°C至+150°C,使其适应各种恶劣环境,保证了可靠性。

应用领域

RB751V40T1G适用于众多应用场景,包括但不限于:

  • 移动设备:由于其低功耗特性,非常适合用于智能手机和平板电脑等移动电子设备的电源管理。
  • 电源管理电路:在各种电源转换设备中作为整流器使用,提供高效的能量转换。
  • 开关电源:在开关电源设计中,RB751V40T1G能够有效降低电源损耗,提高整体系统的效率。
  • 汽车电子:其广泛的温度范围使其适合用于汽车电子设备,能够在高温和低温环境下稳定工作。
  • 电讯设备:在通信基站和移动通信设备中,RB751V40T1G都能提供可靠的性能支持。

封装与尺寸

RB751V40T1G使用SOD-323封装。这种小尺寸、表面贴装型封装方式不仅能节省电路板空间,还方便自动化贴片生产工艺,具有强大的兼容性和适用性。

竞争优势

与传统的二极管相比,RB751V40T1G在速度、效率和性能上均有显著优势。低正向电压、低反向泄漏及高频特性使该器件在高效能要求场合,更具竞争力。特别是对于高密度电路设计,该器件能够在保持体积小的同时,实现高效的电能转换。

结论

RB751V40T1G是安森美推出的高性能肖特基二极管,凭借其出色的电气特性和广泛的应用前景,成为现代电子设备中的理想选择。无论是在消费电子还是工业应用领域,RB751V40T1G都能为设计工程师提供可靠的解决方案,助力高效电路的实现。

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