WMSIC Electronic Components

ON BVSS138LT1G

ModelBVSS138LT1G
PackageSOT-23
BrandON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ON BVSS138LT1G
Type
ON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ON
Electronic Component
BVSS138LT1G
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0222749740
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BVSS138LT1G 产品概述

一、产品简介

BVSS138LT1G 是由安森美半导体(ON Semiconductor)公司生产的一款 N 通道 MOSFET(场效应管),其设计旨在满足低功耗电子设备的需求。这款 MOSFET 采用 SOT-23-3 封装,适合表面贴装(SMD),具有众多优异的性能参数,使其广泛应用于各种电子电路,尤其是在需要高效开关和信号放大器的场合。

二、技术特性

  1. 电流承载能力:BVSS138LT1G 在 25°C 的条件下,具有连续漏极电流(Id)为 200mA 的能力,能够有效支持中等负载的需求,保证了在小型化设计中不牺牲性能。

  2. 漏源电压:该MOSFET的漏源电压(Vdss)最大可达 50V,这使其能够适应许多中高压应用,为设计带来了更大的灵活性。

  3. 导通电阻:在 5V 的驱动电压下,最大导通电阻(Rds On)为 3.5Ω。较低的导通电阻意味着在开关状态下能量损失小,有助于提高电路的整体效率。

  4. 门极阈值电压:BVSS138LT1G 的阈值电压(Vgs(th))最大为 1.5V,这使得其在较低的门极电压下即可导通,适合于逻辑电平驱动应用。

  5. 高工作温度范围:该器件的工作温度范围从 -55°C 到 150°C,适合于极端环境下工作,确保其在严苛应用中的可靠性。

  6. 功率耗散能力:BVSS138LT1G 最大功率耗散能力为 225mW,这一特性使得其能够在长时间运行中保持良好的热管理,减少故障风险。

  7. 输入电容:在 25V 下,输入电容(Ciss)最大值为 50pF,较小的输入电容有助于快速开关,降低驱动电路的功耗。

三、应用领域

BVSS138LT1G 因其优异的电性能而适用于多个领域,包括但不限于:

  1. 便携式电子设备:如手机、平板电脑等要求高能效和低功耗的产品。

  2. 电源管理:在电源转换器和稳压器中,BVSS138LT1G 可用于电源开关与控制,保证电源输送的高效性。

  3. 自动化设备:例如智能家居、传感器、控制系统等,需要高可靠性的 MOSFET,以确保设备的稳定运行。

  4. 功率放大和信号处理:在音频放大器、射频放大器等应用中,该器件也表现出色,用于信号的高效处理和放大。

四、总结

BVSS138LT1G 是一款功能强大而灵活的 N 通道 MOSFET,其低功耗、宽工作温度范围、出色的导通电阻以及高电流和电压规格,使其在现代电子设计中成为理想选择。这款产品在各类应用场景中都能表现良好,尤其适合移动设备和电源管理解决方案的设计需求。安森美的这一创新产品无疑在提升电子设备性能与可靠性方面发挥着重要作用。通过选用 BVSS138LT1G,工程师们可以在设计中实现低功耗、高效率的电子解决方案,满足行业日益增长的性能需求。

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