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ON BAS70-04LT1G BAS70
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- ON BAS70-04LT1G
- Type
- ON
- Unit
- Electronic Component
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- BAS70-04LT1G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0059599861
- Current
- 120mA
- Diode
- 1
- Current(Ir)
- 10uA@70V
- (Vf)
- 1V@15mA
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAS70-04LT1G 产品概述
1. 产品简介
BAS70-04LT1G是一款高性能的肖特基二极管，采用表面贴装型（SMD）封装，适用于需要低正向压降和快速开关速度的电子电路。这款二极管内含一对串联的肖特基二极管，广泛应用于电源管理、信号整形、整流和其他电子应用中。其杰出的反向电压和工作温度性能，使得BAS70-04LT1G能够满足各种苛刻环境条件下的工作需求，适合用于消费电子、工业设备及通信设备等领域。
2. 关键参数
- 二极管类型：肖特基二极管
- 配置：1对串联
- 平均整流电流（Io）：每个二极管100mA
- 正向电压（Vf）：在15mA时为1V
- 反向耐压（Vr）：最大70V
- 反向泄漏电流：在70V时为10µA
- 工作温度范围：-55°C至150°C
- 封装：SOT-23-3（TO-236）
3. 性能特点
BAS70-04LT1G的肖特基特性使其在效率和速度上都有显著优势。其低热压降和极低的反向泄漏电流，使得这款产品在进行高频和苛刻电源环境应用时表现优越。通过采用SOT-23-3封装，BAS70-04LT1G实现了更小的占板面积，适合现代电子设备对空间效率的高要求。
4. 应用领域
BAS70-04LT1G可用于多种应用，包括但不限于：
- 电源整流：可用于开关电源、AC-DC转换器等场合。
- 信号整形：在信号处理电路中用于杜绝不必要的电压波动。
- 负载保护：在电源和负载之间的保护电路中，能有效防止反向电流对负载造成的影响。
- 通信设备：可以在高频通信设备中用作保护或整流用途。
5. 竞争优势
与同类产品相比，BAS70-04LT1G以其独特的肖特基特性和卓越的工作范围，赢得了广泛的市场认可。低正向电压及反向泄漏的表现不仅提高了电源效率，也减少了发热量，提升整体系统的可靠性。此产品使用ON（安森美）品牌制造，保证了其质量和性能的一致性，符合业界的高标准。
6. 设计注意事项
在设计电路时，需要充分考虑BAS70-04LT1G的最大额定值，确保不超过其工作极限，以防止技术性能下降或损坏。此外，选择合适的散热措施是确保二极管能够在高温环境下稳定工作的关键。
7. 结论
总的来说，BAS70-04LT1G是一款极具竞争力的肖特基二极管，凭借其优良的电气特性和广泛的应用范围，将其应用于现代电子设计中，将大大提升电路的性能和可靠性。随着科技的不断进步，BAS70-04LT1G将继续为电子行业的发展提供高效能的解决方案。
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