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ON NVR4003NT3G
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ON NVR4003NT3G
- Type
- ON
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ON
- Electronic Component
- NVR4003NT3G
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.1g
- Electronic Component
- 1
- Electronic Component
- BM0127574266
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 830mW
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 30V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：NVR4003NT3G N通道MOSFET
NVR4003NT3G是一款高性能N通道金属氧化物场效应管（MOSFET），专为低功耗应用设计，具有可靠的特性和良好的热性能。其采用SOT-23（TO-236AB）封装，使其适合于表面贴装技术，广泛应用于各类电子设备中。
1. 基本特性
NVR4003NT3G的主要参数包括：
- 漏源电压（Vdss）：30V，这一电压等级使其能够满足多数中低电压电路的需求。
- 连续漏极电流（Id）：最大为500mA（在25°C环境温度下）。适合用于电源管理、开关电路以及低功耗的设备中。
- 导通电阻（Rds(on)）：在4V时最大为1.5Ω（在10mA时测得），低导通电阻确保了在开关工作状态下的高效率，减少功率损耗。
- 栅极阈值电压（Vgs(th)）：最大为1.4V@250µA，此值表明该MOSFET在比较低的栅电压下即可导通，方便用于低电压控制电路。
- 驱动电压（Vgs）：最大为±20V，表明该元器件能够在一定范围内适应不同的栅极驱动电压。
2. 电气特性
- 输入电容（Ciss）：在5V下，最大为21pF，这一特性使其在高频率应用中保持较低的信号延迟，提升了开关速度。
- 栅电荷（Qg）：最大为1.15nC@5V，低栅电荷值有助于减少驱动电流的需求，因此适合用在高效的开关电源和其他射频应用中。
- 功率耗散（Pd）：最大功率耗散为690mW，这一参数表明在一定的环境条件下，该元件可以安全地散发热量，保证其在高功率应用中的稳定性。
3. 环境与封装
NVR4003NT3G的工作温度范围为-55°C到150°C，这使得其在恶劣环境中仍能保持稳定工作，适合于航空航天、汽车电子和其他工业应用。其采用SOT-23封装（TO-236AB）的小型化设计，适合在空间有限的场合中使用，方便在各种电路板上进行布局。
4. 应用场景
NVR4003NT3G广泛应用于：
- 开关电源：MOSFET的高开关频率特性使其在电源转换和电压调节方面表现出色，尤其适合用于DC-DC转换器中。
- 电机驱动：在电机控制和驱动电路中，可用来进行PWM（脉宽调制）调节，确保电机在不同负载下的高效运行。
- 负载开关：可用作低功耗负载开关，能够有效地控制电路中负载的开关状态。
- 信号开关与模拟开关电路：因其快速响应的特性，NVR4003NT3G也常用于信号切换和放大电路。
5. 结论
作为一款优秀的N通道MOSFET，NVR4003NT3G凭借其经济的功耗、高效的开关性能及广泛的应用场景，成为了电子设计工程师的理想选择。无论在电源管理、低功耗电路还是高温环境下使用，该器件都能提供稳定可靠的性能，是现代电子设备设计不可或缺的一部分。
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